M. Micjan, J. Nevrela, M. Novota, S. Flickyngerová, P. Juhasz, J. Uhrik, J. Jakabovic, M. Weis
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Ferroelectric polymer films for flexible memory devices
Here we demonstrate application of organic ferroelectric insulating material: copolymer vinylidene fluoride and trifluoroethylene P(VDF-TrFE) for organic memory devices. The metal-insulator-metal structures have been used to study the ferroelectric properties and represent the model applications for ferroelectric field-effect transistors (FeFETs) and ferroelectric random access memories (FRAM). The current-voltage and capacitance-voltage characteristics depicted ferroelectric switching phenomenon present in thin-film structures and polarization properties have been analysed. This work describes the MIM device fabrication technology as well as the evaluation of material properties: saturated polarization, maximum electric field intensity, critical electric field, and relative dielectric constant.