亚微米高应变In0.8Ga0.2As/AlAs谐振隧穿二极管物理模型模拟研究

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2014-10-01 DOI:10.1109/ASDAM.2014.6998671

W. M. Jubadi, M. A. Md Zawawi, M. Missous

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引用次数: 3

摘要

本文提出了一个内部制造的亚微米InGaAs/AlAs双势垒谐振隧道二极管(RTD)的物理模型。该模型是在ATLAS SILVACO中开发的，以扩展先进III-V量子器件的研究。用实测数据对负差分电阻(NDR)电流和峰谷电流比(PVCR)进行了仿真和验证。研究了势垒宽度、间隔层宽度、量子阱厚度和掺杂等结构参数对RTD电流电压特性的影响。

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Simulative study on physical modelling of submicrometer highly-strained In0.8Ga0.2As/AlAs resonant tunnelling diode

This work presents a physical modelling for an in-house fabricated submicron InGaAs/AlAs double barrier Resonant Tunnelling diode (RTD). The modelling is developed in ATLAS SILVACO to extend the study of advanced III-V quantum devices. The Negative Differential Resistance (NDR) current and the peak-to-valley current ratio (PVCR) are simulated and validated with measurement data. The effects of structural parameters such as barrier width, spacer width, quantum well thickness and doping on current-voltage characteristics of RTD are investigated.

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The Tenth International Conference on Advanced Semiconductor Devices and Microsystems

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