2016 74th Annual Device Research Conference (DRC)最新文献_第5页

Radiation hardened graphene field effect transistors 辐射硬化石墨烯场效应晶体管

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-06-19 DOI: 10.1109/DRC.2016.7548423

Konstantinos Alexandrou, A. Masurkar, H. Edrees, J. Wishart, Y. Hao, Nicholas Petrone, J. Hone, I. Kymissis

引用次数: 1

Stable switching of resistive random access memory on the nanotip array electrodes 电阻式随机存储器在纳米尖端阵列电极上的稳定开关

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-06-19 DOI: 10.1109/DRC.2016.7548428

K. Tsai, Chih-Hsiang Ho, W. Chang, Jr-jian Ke, Elif S. Mungan, Yuh‐Lin Wang, Jr-hau He

引用次数: 0

Ultra-wide bandgap AlGaN channel MISFET with polarization engineered ohmics 具有极化工程欧姆的超宽带隙AlGaN通道MISFET

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-06-19 DOI: 10.1109/DRC.2016.7548394

S. Bajaj, F. Akyol, S. Krishnamoorthy, Yuewei Zhang, A. Armstrong, A. Allerman, S. Rajan

{"title":"Ultra-wide bandgap AlGaN channel MISFET with polarization engineered ohmics","authors":"S. Bajaj, F. Akyol, S. Krishnamoorthy, Yuewei Zhang, A. Armstrong, A. Allerman, S. Rajan","doi":"10.1109/DRC.2016.7548394","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548394","url":null,"abstract":"We report on the first ultra-wide bandgap Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistor (MISFET) with heterostructure engineered ohmic contacts. The large breakdown field of AlN (12 MV/cm) and the superior device figures of merit make wider bandgap AlGaN attractive for the next-generation RF power amplifiers and switches [1]. However, a critical challenge preventing advancement in high composition AlGaN-based devices is the high resistance of ohmic contacts, due to the large ionization energy of dopants and the low electron affinity of AlN, both of which increase tunneling barrier for electrons. In this work, we use reverse polarization-graded n++ AlGaN contact layers to achieve a record low contact resistance (Rc) of 0.3 Ω.mm to 75 nm thick n-Al0.75Ga0.25N channel, translating in a specific contact resistance (ρsp) of 1.9×10-6 Ω.cm2. We then demonstrate the first ultra-wide bandgap Al0.75Ga0.25N channel MISFET with gate-recessed structure, employing polarization-graded contacts and Atomic Layer Deposited Al2O3 as the gate-dielectric.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132299056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A new approach for energy band engineering in flexible GaAs devices 柔性砷化镓器件能带工程的新方法

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-06-19 DOI: 10.1109/DRC.2016.7548451

A. Alharbi, D. Shahrjerdi

{"title":"A new approach for energy band engineering in flexible GaAs devices","authors":"A. Alharbi, D. Shahrjerdi","doi":"10.1109/DRC.2016.7548451","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548451","url":null,"abstract":"Flexible electronics based on rigid conventional crystalline semiconductors such as silicon and compound semiconductors is emerging as a new class of technology. At present, the existing approaches for realizing flexible electronics from those materials have focused on maintaining the performance of the original device. Here, we demonstrate a new approach for tailoring the electronic and optoelectronic properties of high-performance flexible devices through strain engineering. In this work, we use flexible gallium arsenide (GaAs) devices as a model system. We show that layer transfer through substrate cracking with a pre-tensioned nickel film can be utilized for engineering the electronic band structure of flexible GaAs devices. We empirically and theoretically quantify the effect of the `engineered' residual strain on the electronic band structure in these flexible GaAs devices. Photoluminescence (PL) and quantum efficiency (QE) measurements indicate the widening of the GaAs energy bandgap due to the residual compressive strain. More importantly, our strain engineering method is universal and can be readily extended to other flexible material systems such as gallium nitride.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116599940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A scalable non-electroformed memdiode for neuromorphic circuitry 用于神经形态电路的可伸缩非电形成记忆二极管

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-06-19 DOI: 10.1109/DRC.2016.7548463

J. Shank, M. Tellekamp, W. Doolittle

引用次数: 1

Numerical Fokker-Planck simulation of stochastic write error in spin torque switching with thermal noise 考虑热噪声的自旋转矩开关随机写入误差的Fokker-Planck数值模拟

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-06-19 DOI: 10.1109/DRC.2016.7548462

Yunkun Xie, B. Behin-Aein, Avik W. Ghosh

{"title":"Numerical Fokker-Planck simulation of stochastic write error in spin torque switching with thermal noise","authors":"Yunkun Xie, B. Behin-Aein, Avik W. Ghosh","doi":"10.1109/DRC.2016.7548462","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548462","url":null,"abstract":"Emerging spintronics and nanomagnetic devices have attracted a lot of attention due to their versatility, scalability and energy efficiency. Most spintronics applications require manipulation of nano-magnet in a fast and efficient way. Spin transfer torque (STT) effect[1] is so far the most studied and well demonstrated means to switch a nano-size magnetic. Compared to traditional switching scheme by magnetic field, STT provides a scalable solution to manipulate the magnetization of a nano-sized magnet. STT based memory spin transfer torque magnetic random access memory (STT-MRAM) and spin torque oscillator (STO) have been proposed and experimentally demonstrated[2, 3]. One issue accompanies magnetic switching is the thermal noise. Under room temperature the magnetic switching under STT is susceptible to thermal fluctuation and often results in a distribution in switching current/delay. In applications like STT based memory, its stochastic nature can cause read/write error. In the case of write operation, increasing applied current or switching time can effectively reduce write error but both quantities are limited by other considerations such as energy dissipation, junction breakdown and etc. This kind of trade-off is essential in device and application design. The aim of the work is to promote numerical Fokker-Planck based framework to study thermal effect in STT switching. The comparison between numerical Fokker-Planck approach and other methods are summarized. We have also investigated write error rate (WER) in STT switching with a focus on its `slope' which is related to the write margin but not so often discussed in literature.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133869977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Novel hydroxy-phenyl phosphorus porphyrin self-assembled monolayers for conformal n-type doping in Finfets 新型羟基苯基磷卟啉自组装单分子膜在Finfets中的适形n型掺杂

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-06-19 DOI: 10.1109/DRC.2016.7548435

Tejas R. Naik, R. Krishnan, Priyanka Kumari, M. Ravikanth, V. Rao

引用次数: 2

Towards wafer scale monolayer MoS2 based flexible low-power RF electronics for IoT systems 面向物联网系统的基于单层MoS2的柔性低功耗射频电子器件

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-06-19 DOI: 10.1109/DRC.2016.7548483

M. Yogeesh, Hsiao-Yu Chang, Wei Li, S. Rahimi, A. Rai, A. Sanne, R. Ghosh, S. Banerjee, D. Akinwande

引用次数: 3

Electrically driven reversible insulator-metal phase transition in Ca2RuO4 Ca2RuO4中电驱动可逆绝缘体-金属相变

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-06-19 DOI: 10.1109/DRC.2016.7548402

N. Shukla, M. Jerry, H. Nair, M. Barth, D. Schlom, S. Datta

引用次数: 2

Direct observation of power dissipation in monolayer MoS2 devices 直接观察单层MoS2器件的功耗

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-06-19 DOI: 10.1109/DRC.2016.7676130

E. Yalon, C. McClellan, K. Smithe, Y. C. Shin, R. Xu, E. Pop

引用次数: 5