Direct observation of power dissipation in monolayer MoS2 devices

Abstract

We studied power dissipation in 1L MoS2 devices using Raman thermometry for the first time. We uncovered non-uniformities of power dissipation and the important role of the MoS2-substrate interface thermal resistance. These results provide critical insights for thermal design of devices based on 2D materials. This work was supported by the AFOSR, NSF EFRI 2-DARE, and Stanford SystemX.