2016 74th Annual Device Research Conference (DRC)最新文献

Joint EMC/DRC plenary session EMC/DRC联合全体会议

2016 74th Annual Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/drc.2018.8442260

引用次数: 0

Novel materials for next generation photonic devices 新一代光子器件的新材料

2016 74th Annual Device Research Conference (DRC) Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116232

M. Lipson

引用次数: 0

True random number generation using voltage controlled spin-dice 使用电压控制的自旋骰子生成真正的随机数

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-08-25 DOI: 10.1109/DRC.2016.7548436

Abhronil Sengupta, Akhilesh R. Jaiswal, K. Roy

{"title":"True random number generation using voltage controlled spin-dice","authors":"Abhronil Sengupta, Akhilesh R. Jaiswal, K. Roy","doi":"10.1109/DRC.2016.7548436","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548436","url":null,"abstract":"True Random Number Generators (TRNGs) are becoming increasingly popular in cryptography and other security applications. However, conventional TRNG designs in hardware often result in significantly high area and power consumption [1] and hence recent research efforts have been directed to developing compact, low power and high throughput TRNGs based on emerging technologies like the Magnetic Tunnel Junction (MTJ “spin-dice”) [2]. The random number generation process usually takes place through the application of two current pulses, namely the “reset” pulse to orient the magnet to a known initial state and subsequently the “roll” pulse to switch the magnet with probability of 0.5. The stochastic switching nature of the MTJ arises from the inherent thermal noise present in the device. However, the quality of the random number generated is not sufficiently high due to variations in the magnitude of current required to switch the MTJ with 50% probability (arising from PVT variations). Hence expensive post-processing schemes are usually required [2]. In this work, we explore the design of a Voltage Controlled Spin-Dice (VC-SD) using the recently discovered phenomena of Voltage Controlled Magnetic Anisotropy (VCMA) in an MTJ structure to orient the ferromagnet along a meta-stable magnetization direction and subsequently utilizing thermal noise to produce random switching of the magnet to either one of the stable magnetization directions. In addition to power and reliability benefits, the proposed TRNG is able to provide better resiliency against PVT variations.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116491413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Current saturation and steep switching in graphene PN junctions using angle-dependent scattering 利用角相关散射的石墨烯PN结中的电流饱和和陡峭开关

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-08-25 DOI: 10.1109/DRC.2016.7548421

M. Elahi, Avik W. Ghosh

引用次数: 2

Recent developments in mid-infrared quantum cascade lasers and applications 中红外量子级联激光器及其应用的最新进展

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-08-25 DOI: 10.1109/DRC.2016.7548513

C. Gmachl

引用次数: 0

Trapping of biomolecules using bulk acoustic wave resonators 利用体声波谐振器捕获生物分子

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-08-25 DOI: 10.1109/DRC.2016.7548432

Zifan Tang, Hongxiang Zhang, Wenpeng Liu, X. Duan

引用次数: 1

Investigation of thermal effects in β-Ga2O3 MOSFET using pulsed IV 利用脉冲IV研究β-Ga2O3 MOSFET的热效应

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-08-25 DOI: 10.1109/DRC.2016.7548419

N. Moser, A. Crespo, S. Tetlak, A. Green, K. Chabak, G. Jessen

引用次数: 2

Large-signal RF GaN HEMT simulation using Fermi Kinetics Transport 基于费米动力学输运的大信号射频GaN HEMT模拟

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-08-25 DOI: 10.1109/DRC.2016.7548427

N. C. Miller, J. Albrecht, M. Grupen

引用次数: 2

Switching mechanisms of Cu/SiC resistive memories with W and Au counter electrodes W和Au对电极的Cu/SiC电阻性记忆开关机制

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-06-20 DOI: 10.1109/DRC.2016.7548455

K. Morgan, J. Fan, R. Gowers, Liudi Jiang, C. H. De Groot

引用次数: 0

First principles study of twisted bilayer MoS2 through band unfolding 双氧水扭曲带展开第一性原理研究

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-06-19 DOI: 10.1109/DRC.2016.7548458

Yaohua Tan, Avik W. Ghosh

{"title":"First principles study of twisted bilayer MoS2 through band unfolding","authors":"Yaohua Tan, Avik W. Ghosh","doi":"10.1109/DRC.2016.7548458","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548458","url":null,"abstract":"Two dimensional(2D) materials such as graphene and transition metal dichalcogenides(TMDs) are exciting candidates for electronic and optoelectronic device applications. In particular, there is growing interest in stacked 2D materials that often arise naturally, and also provide added possibilities for desired functionalities with varying thickness and composition. It is essential to understand the electronic properties of stacked 2D materials such as twisted multilayer TMDs and TMD het-erostructures are sensitive to inter-layer interactions [3,4]. The translational symmetry of a twisted multilayer TMD is compromised due to the twist angle. Consequently a supercell much larger than the primitive unit cell needs to be considered, creating a spaghetti-like band structure from band folding. The challenge for theoretical studies of twisted multilayer systems is to extract inter-layer interactions from the folded band structures. In this work, band structures of twisted bilayer TMDs are studied using first principles calculations. In order to extract the band-edge splittings relavent to inter-layer interactions, we apply a band unfolding technique to the twisted bilayer TMDs. Multi-valley effective mass models are then created to model the bandedges at the Γ point as well as indirect conduction bands along K directions.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115452404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0