Large-signal RF GaN HEMT simulation using Fermi Kinetics Transport

Abstract

This article presents a computational framework which accurately simulates and characterizes a GaN HEMT power amplifier. The static I-V family is computed and compared to measurements to demonstrate the solver's accuracy, and the device simulation framework is verified by comparing the HB-FKT and T-FKT solvers. Load-pull simulations are used to optimize the amplifier performance by choosing an optimal load impedance. Finally, several figures of merit are presented with the optimal load.