Switching mechanisms of Cu/SiC resistive memories with W and Au counter electrodes

Abstract

Resistive memory is an emerging non-volatile memory, with high density, low power and a simple structure [1]. The memories switch between high resistance state (HRS) and low resistance state (LRS). The physical mechanism is based upon a conductive filament forming and rupturing between two electrodes. In electrochemical metallization memory (ECM) this filament is made from cations, originating from an active electrode, e.g. Cu or Ag [2]. The counter electrode is normally an inert material such as Pt or W. Although much research has been conducted into resistive memory, the role of the filament reduction at the counter electrode in ECM memories is still not fully understood.