A scalable non-electroformed memdiode for neuromorphic circuitry

An electronic device is introduced that exhibits rectification, hysteresis, and capacitance. These three properties replicate biological functionality useful in neuromorphic circuitry. A similar device operating on different physical mechanisms was previously demonstrated in 2013, but its fabrication required an electro-formation process that introduces difficulties scaling to high density circuitry [1]. The metal-insulator-metal (MIM) structures discussed herein exhibit rectification, hysteresis, and capacitance resulting from an intentionally high defect density as deposited with no post-fabrication treatment necessary.