Stable switching of resistive random access memory on the nanotip array electrodes

Abstract

We have demonstrated that ZnO resistive memory with a nanostructured substrate has great potential in improving ReRAM's RS characteristics. The electric field concentrated on nanotip structures is believed to play a crucial role for lowering Vf and Vset. The uniformity of the nanostructures is also important for the optimization of device performance, as well as improving the switching uniformity and reliability. Combining with the fact that fabrication process has low-cost merit with excellent stability and scalability, the nanotip array is highly attractive for cost-effective ReRAM applications and for the device miniaturization.