发布求助
文献互助 智能选刊 最新文献

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)最新文献

筛选
英文 中文
Gallium Arsenide Electro-Optic Modulators 砷化镓电光调制器
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978557
R. Walker, M. O'Keefe, N. Cameron, H. Ereifej, T. Brast
{"title":"Gallium Arsenide Electro-Optic Modulators","authors":"R. Walker, M. O'Keefe, N. Cameron, H. Ereifej, T. Brast","doi":"10.1109/CSICS.2014.6978557","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978557","url":null,"abstract":"GaAs/AlGaAs provides an environmentally stable and rugged guided-wave system for realisation of high functionality electro-optic modulators for telecommunications, avionics and aerospace. We detail the guided-wave building-blocks required to build complex modulator components.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125384634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Device Perspective on 2D Materials 2D材料的器件视角
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978548
P. Ye
{"title":"Device Perspective on 2D Materials","authors":"P. Ye","doi":"10.1109/CSICS.2014.6978548","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978548","url":null,"abstract":"The rise of two-dimensional (2D) crystals has given new challenges and opportunities to the device research. The semiconducting MoS2 as n-channel and few-layer phosphorene as p-channel have been considered as promising ultra-thin body channels for future microelectronic and optoelectronic devices. In this paper, we focus on the fundamental device properties of these 2D transistors. In the first part of the paper, we demonstrate high-performance MoS2 FETs with record drain current of 460 mA/mm and record low contact resistance of 0.5 Ω·mm enabled by molecular chemical doping of 1,2 dichloroethane (DCE). In the second part of the paper, we introduce a new p-type 2D material called phosphorene which is one monolayer of layered black phosphorus (BP). At room temperature, the few-layer phosphorene field-effect transistors with 1.0 μm channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm2/V·s, and an on/off ratio up to 104. We demonstrate the possibility of phosphorene integration by constructing the first 2D CMOS inverter of phosphorene PMOS and MoS2 NMOS transistors and the first BP/MoS2 PN diode for photonic applications.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129011992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Materials and Integration Strategies for Modern RF Integrated Circuits 现代射频集成电路的材料与集成策略
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978567
D. Green, C. L. Dohrman, A. Kane, Tsu-Hsi Chang
{"title":"Materials and Integration Strategies for Modern RF Integrated Circuits","authors":"D. Green, C. L. Dohrman, A. Kane, Tsu-Hsi Chang","doi":"10.1109/CSICS.2014.6978567","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978567","url":null,"abstract":"The DARPA Microsystems Technology Office is developing revolutionary materials, devices, and integration techniques for meeting the RF integrated circuit performance requirements for advanced modern RF systems. DARPA is enabling these systems through systematic development of materials and devices, circuits, and integration technologies for compound semiconductors. The DARPA Nitride Electronic Next-Generation Technology (NEXT) program is developing high performance nitride transistors for high-speed RF, analog and mixed signal electronics, thus overcoming the Johnson figure of merit limits to achieving simultaneous high-speed operation and high breakdown voltage. The DARPA Microscale Power Conversion (MPC) program is developing nitride-based technology to enable dynamic envelope-tracking power conversion embedded in RF radiating elements. The DARPA Diverse Accessible Heterogeneous Integration (DAHI) program is developing transistor-scale heterogeneous integration processes to intimately combine advanced compound semiconductor (CS) devices, as well as other emerging materials and devices, with high-density silicon CMOS technology. Taken together, these programs are addressing many of the critical challenges for next-generation RF modules and seek to revolutionize DoD capabilities in this area.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123975053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Miniaturization of Ka-Band High Power Amplifier by 0.15 µm GaN MMIC Technology 利用0.15µm GaN MMIC技术实现ka波段高功率放大器的小型化
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978569
K.K.-S. Kong, M. Kao, S. Nayak
{"title":"Miniaturization of Ka-Band High Power Amplifier by 0.15 µm GaN MMIC Technology","authors":"K.K.-S. Kong, M. Kao, S. Nayak","doi":"10.1109/CSICS.2014.6978569","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978569","url":null,"abstract":"We demonstrate a compact and efficient Ka-band high power amplifier with output power of 34.5dBm at 30 GHz by using 0.15 μm GaN technology. This paper reports record compact area of 2.38 mm^2 in a Ka-band high power amplifier (HPA) class. We employed 0.15 μm GaN process on 50 μm thick SiC substrate technology to achieve high output power with high efficiency and compact design. The advantage of a GaN PA in commercial millimeter-wave market is illustrated by comparing it to similar GaAs power amplifiers.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131410367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Single Chip RF Variable Gain Low Noise Amplifier 单片射频可变增益低噪声放大器
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978579
Bin Hou, Yibing Zhao, Eric Newman, Shuyun Zhang
{"title":"Single Chip RF Variable Gain Low Noise Amplifier","authors":"Bin Hou, Yibing Zhao, Eric Newman, Shuyun Zhang","doi":"10.1109/CSICS.2014.6978579","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978579","url":null,"abstract":"A monolithic integrated single chip RF variable gain low noise amplifier (VGLNA) based on GaAs BiFET technology is demonstrated in this work. The LNA could be operated from 700MHz to 3GHz. The measured NF is 1dB at both 975MHz and 1.75GHz. The gain of the VGLNA can be varied from a maximum of 36dB down to -13dB at 1.75GHz. Measured Output IP3 is 38.4dBm and measured Output 1dB compression is greater than 27dBm at 1.75GHz at maximum gain. The measured input return loss is better than 14dB across the full gain range. The single die VGLNA is implemented in a 5×5mm LFCSP package. It draws 265mA on a 5V supply.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125002897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A >0mW SSPA from 76-94GHz, with Peak 28.9% PAE at 86GHz 在76-94GHz范围内，A >0mW的SSPA，在86GHz范围内峰值PAE为28.9%
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978526
Z. Griffith, M. Urteaga, P. Rowell, R. Pierson
{"title":"A >0mW SSPA from 76-94GHz, with Peak 28.9% PAE at 86GHz","authors":"Z. Griffith, M. Urteaga, P. Rowell, R. Pierson","doi":"10.1109/CSICS.2014.6978526","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978526","url":null,"abstract":"A 69.5-94.0GHz solid-state power amplifier MMIC is presented in 250nm InP HBT, where from 76-94GHz it demonstrates >200mW Pout with simultaneous >23.5% PAE, 11dB compressed gain and 694mW PDC. At 86GHz operation, 232mW Pout with peak 28.9% PAE is observed - this corresponds to 1.21W/mm linear power density. This 2-stage amplifier has a flat S21 mid-band gain of 14-15dB, and the 1dB small-signal gain roll-off is between 66-96GHz. The large-signal Psat bandwidth is between 69.5-94GHz. This SSPA utilizes a novel, compact power cell topology developed for multi-finger HBTs, which overcomes the inability of the RF output interconnects and combiners to carry the high DC bias currents required by the HBT PA cells in the thin-film microstrip interconnect. Across the 76-94GHz bandwidth, P1dB gain compression Pout is >118mW which corresponds to ≥ 14.5% PAE; this is a relevant RF operating point where higher linearity operation may be required. This work improves upon the state-of-the-art for E-, and W-Band SSPAs by demonstrating 6x higher bandwidth (24.5GHz largesignal bandwidth) while having high PAE > 23.5%. This compact approach can permit an additional 4× or 8× power combining and in-turn a monolithic 1-1.5W Pout SSPA in this 250nm InP HBT technology at Eand W-band.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129731516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A 25Gb/s Common-Cathode VCSEL Driver 25Gb/s共阴极VCSEL驱动程序
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978529
K. T. Ng, Y. Choi, Keh-Chung Wang
{"title":"A 25Gb/s Common-Cathode VCSEL Driver","authors":"K. T. Ng, Y. Choi, Keh-Chung Wang","doi":"10.1109/CSICS.2014.6978529","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978529","url":null,"abstract":"A common-cathode VCSEL driver is presented in this paper. Overcoming the large parasitics introduced by the current source at the output node, this VCSEL driver is able to operate at data rate of 25Gb/s. With different rising/falling edge speed, it is able to address the non-linear issues of VCSEL diode. The VCSEL driver was fabricated using IBM8HP BiCMOS technology, dissipating less than 60mW and featuring a core area of 0.45mmX200mm.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130407197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
InP DHBT Mux-Drivers for Very High Symbol Rate Optical Communications 用于非常高符号速率光通信的InP DHBT多路驱动器
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978562
J. Godin, J. Dupuy, F. Jorge, F. Blache, M. Riet, V. Nodjiadjim, P. Berdaguer, B. Duval, A. Konczykowska
{"title":"InP DHBT Mux-Drivers for Very High Symbol Rate Optical Communications","authors":"J. Godin, J. Dupuy, F. Jorge, F. Blache, M. Riet, V. Nodjiadjim, P. Berdaguer, B. Duval, A. Konczykowska","doi":"10.1109/CSICS.2014.6978562","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978562","url":null,"abstract":"This paper reports on very high speed large swing drivers suitable for the generation of high symbol rate spectrally efficient optical transmission signals. To accommodate available data rate, these circuits integrate multiplexing stages. Fabricated using our InP DHBT technology (FT and FMAX >300 GHz, BVCE0 ~5 V), these circuits include NRZ and Multi-Level drivers; they have been used to generate OOK, QPSK and QAM signals in optical transmission experiments at bitrates beyond 100 Gbps.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130195747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
GaN Technology for E, W and G-Band Applications 用于E, W和g波段应用的GaN技术
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978559
A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, D. Brown, A. Corrion, H. Moyer, S. Burnham, D. Regan, R. Grabar, C. Mcguire, M. Wetzel, R. Bowen, P. Chen, H. Tai, A. Schmitz, H. Fung, A. Fung, D. Chow
{"title":"GaN Technology for E, W and G-Band Applications","authors":"A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, D. Brown, A. Corrion, H. Moyer, S. Burnham, D. Regan, R. Grabar, C. Mcguire, M. Wetzel, R. Bowen, P. Chen, H. Tai, A. Schmitz, H. Fung, A. Fung, D. Chow","doi":"10.1109/CSICS.2014.6978559","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978559","url":null,"abstract":"Highly scaled GaN T-gate technology offers devices with high ft/fMAX, and low minimum noise figure while still maintaining high breakdown voltage and high linearity typical for GaN technology. In this paper we report an E-band GaN power amplifier (PA) with output power (Pout) of 1.3 W at power added efficiency (PAE) of 27% and a 65-110 GHz ultra-wideband low noise amplifier (LNA). We also report the first G-band GaN amplifier capable of producing output power density of 296mW/mm at 180 GHz. All these components were realized with a 40 nm T-gate process (ft= 200 GHz, fMAX= 400 GHz, Vbrk > 40V) which can enable the next generation of transmitter and receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129215781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 72
Progress on Phase Separation Microfluidics 相分离微流体研究进展
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978575
D. Agonafer, J. Palko, Y. Won, K. Lopez, Thomas J. Dusseault, Julie Gires, M. Asheghi, J. Santiago, K. Goodson
{"title":"Progress on Phase Separation Microfluidics","authors":"D. Agonafer, J. Palko, Y. Won, K. Lopez, Thomas J. Dusseault, Julie Gires, M. Asheghi, J. Santiago, K. Goodson","doi":"10.1109/CSICS.2014.6978575","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978575","url":null,"abstract":"High power density GaN HEMT technology can increase the capability of defense electronics systems with the reduction of CSWaP. However, thermal limitations have currently limited the inherent capabilities of this technology where transistor-level power densities that exceed 10 kW/cm2 are electrically feasible. This paper introduces the concept of an evaporative microcooling device utilizing some of the current two-phase vapor separation technologies currently being developed for water and dielectric liquids.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128942151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信