2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)最新文献_第4页

Materials and Integration Strategies for Modern RF Integrated Circuits 现代射频集成电路的材料与集成策略

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978567

D. Green, C. L. Dohrman, A. Kane, Tsu-Hsi Chang

{"title":"Materials and Integration Strategies for Modern RF Integrated Circuits","authors":"D. Green, C. L. Dohrman, A. Kane, Tsu-Hsi Chang","doi":"10.1109/CSICS.2014.6978567","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978567","url":null,"abstract":"The DARPA Microsystems Technology Office is developing revolutionary materials, devices, and integration techniques for meeting the RF integrated circuit performance requirements for advanced modern RF systems. DARPA is enabling these systems through systematic development of materials and devices, circuits, and integration technologies for compound semiconductors. The DARPA Nitride Electronic Next-Generation Technology (NEXT) program is developing high performance nitride transistors for high-speed RF, analog and mixed signal electronics, thus overcoming the Johnson figure of merit limits to achieving simultaneous high-speed operation and high breakdown voltage. The DARPA Microscale Power Conversion (MPC) program is developing nitride-based technology to enable dynamic envelope-tracking power conversion embedded in RF radiating elements. The DARPA Diverse Accessible Heterogeneous Integration (DAHI) program is developing transistor-scale heterogeneous integration processes to intimately combine advanced compound semiconductor (CS) devices, as well as other emerging materials and devices, with high-density silicon CMOS technology. Taken together, these programs are addressing many of the critical challenges for next-generation RF modules and seek to revolutionize DoD capabilities in this area.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123975053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

FD-SOI Technology Development and Key Devices Characteristics for Fast, Power Efficient, Low Voltage SoCs 快速、高效、低电压soc的FD-SOI技术发展和关键器件特性

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978554

J. Hartmann

引用次数: 6

Device Perspective on 2D Materials 2D材料的器件视角

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978548

P. Ye

引用次数: 0

Miniaturization of Ka-Band High Power Amplifier by 0.15 µm GaN MMIC Technology 利用0.15µm GaN MMIC技术实现ka波段高功率放大器的小型化

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978569

K.K.-S. Kong, M. Kao, S. Nayak

引用次数: 7

Single Chip RF Variable Gain Low Noise Amplifier 单片射频可变增益低噪声放大器

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978579

Bin Hou, Yibing Zhao, Eric Newman, Shuyun Zhang

引用次数: 2

A >0mW SSPA from 76-94GHz, with Peak 28.9% PAE at 86GHz 在76-94GHz范围内，A >0mW的SSPA，在86GHz范围内峰值PAE为28.9%

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978526

Z. Griffith, M. Urteaga, P. Rowell, R. Pierson

{"title":"A >0mW SSPA from 76-94GHz, with Peak 28.9% PAE at 86GHz","authors":"Z. Griffith, M. Urteaga, P. Rowell, R. Pierson","doi":"10.1109/CSICS.2014.6978526","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978526","url":null,"abstract":"A 69.5-94.0GHz solid-state power amplifier MMIC is presented in 250nm InP HBT, where from 76-94GHz it demonstrates >200mW Pout with simultaneous >23.5% PAE, 11dB compressed gain and 694mW PDC. At 86GHz operation, 232mW Pout with peak 28.9% PAE is observed - this corresponds to 1.21W/mm linear power density. This 2-stage amplifier has a flat S21 mid-band gain of 14-15dB, and the 1dB small-signal gain roll-off is between 66-96GHz. The large-signal Psat bandwidth is between 69.5-94GHz. This SSPA utilizes a novel, compact power cell topology developed for multi-finger HBTs, which overcomes the inability of the RF output interconnects and combiners to carry the high DC bias currents required by the HBT PA cells in the thin-film microstrip interconnect. Across the 76-94GHz bandwidth, P1dB gain compression Pout is >118mW which corresponds to ≥ 14.5% PAE; this is a relevant RF operating point where higher linearity operation may be required. This work improves upon the state-of-the-art for E-, and W-Band SSPAs by demonstrating 6x higher bandwidth (24.5GHz largesignal bandwidth) while having high PAE > 23.5%. This compact approach can permit an additional 4× or 8× power combining and in-turn a monolithic 1-1.5W Pout SSPA in this 250nm InP HBT technology at Eand W-band.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129731516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

A 23.2dBm at 210GHz to 21.0dBm at 235GHz 16-Way PA-Cell Combined InP HBT SSPA MMIC 23.2dBm在210GHz到21.0dBm在235GHz 16路PA-Cell组合InP HBT SSPA MMIC

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978528

Z. Griffith, M. Urteaga, P. Rowell, R. Pierson

{"title":"A 23.2dBm at 210GHz to 21.0dBm at 235GHz 16-Way PA-Cell Combined InP HBT SSPA MMIC","authors":"Z. Griffith, M. Urteaga, P. Rowell, R. Pierson","doi":"10.1109/CSICS.2014.6978528","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978528","url":null,"abstract":"A 3-stage, 16-way PA-cell combined InP HBT solidstate power amplifier MMIC is presented demonstrating 23.2dBm (208.7mW) Pout at 210GHz to 21.0dBm (126.0mW) at 235GHz for 10dBm Pin - this represents 13.2-11.0dB large-signal gain. The total high-power bandwidth of this SSPA is between 190.8-237GHz. The amplifier has 24.3-26.7dB S21 gain from 206243GHz. The total PDC is 5.81W. A power-cascode cell topology is used for the PA unit cell, which is used to generate a 3-Stage, 4Cell output combined SSPA - then four of these 4-Cell SSPAs are combined using low insertion loss Wilkinson dividers and combiners to realize the overall 16-way PA cell combined MMIC. This is the first reported SSPA MMIC demonstrating > 200mW Pout above 200GHz operation. The output powers from this work across 190.8-237GHz are the highest values reported from an SSPA MMIC and improves upon state-of-the-art by 1.16-1.6× from 190.8-225GHz and by 1.6× from 230-235GHz. This result closely meets or exceeds across the same frequency operation the highest Pout reported from a solid-state based PA, a four-chip waveguide-block combined module.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126737577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 23

GaN Technology for E, W and G-Band Applications 用于E, W和g波段应用的GaN技术

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978559

A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, D. Brown, A. Corrion, H. Moyer, S. Burnham, D. Regan, R. Grabar, C. Mcguire, M. Wetzel, R. Bowen, P. Chen, H. Tai, A. Schmitz, H. Fung, A. Fung, D. Chow

引用次数: 72

InP DHBT Mux-Drivers for Very High Symbol Rate Optical Communications 用于非常高符号速率光通信的InP DHBT多路驱动器

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978562

J. Godin, J. Dupuy, F. Jorge, F. Blache, M. Riet, V. Nodjiadjim, P. Berdaguer, B. Duval, A. Konczykowska

引用次数: 8

Progress on Phase Separation Microfluidics 相分离微流体研究进展

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978575

D. Agonafer, J. Palko, Y. Won, K. Lopez, Thomas J. Dusseault, Julie Gires, M. Asheghi, J. Santiago, K. Goodson

引用次数: 1