25Gb/s共阴极VCSEL驱动程序

K. T. Ng, Y. Choi, Keh-Chung Wang
{"title":"25Gb/s共阴极VCSEL驱动程序","authors":"K. T. Ng, Y. Choi, Keh-Chung Wang","doi":"10.1109/CSICS.2014.6978529","DOIUrl":null,"url":null,"abstract":"A common-cathode VCSEL driver is presented in this paper. Overcoming the large parasitics introduced by the current source at the output node, this VCSEL driver is able to operate at data rate of 25Gb/s. With different rising/falling edge speed, it is able to address the non-linear issues of VCSEL diode. The VCSEL driver was fabricated using IBM8HP BiCMOS technology, dissipating less than 60mW and featuring a core area of 0.45mmX200mm.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A 25Gb/s Common-Cathode VCSEL Driver\",\"authors\":\"K. T. Ng, Y. Choi, Keh-Chung Wang\",\"doi\":\"10.1109/CSICS.2014.6978529\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A common-cathode VCSEL driver is presented in this paper. Overcoming the large parasitics introduced by the current source at the output node, this VCSEL driver is able to operate at data rate of 25Gb/s. With different rising/falling edge speed, it is able to address the non-linear issues of VCSEL diode. The VCSEL driver was fabricated using IBM8HP BiCMOS technology, dissipating less than 60mW and featuring a core area of 0.45mmX200mm.\",\"PeriodicalId\":309722,\"journal\":{\"name\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2014.6978529\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2014.6978529","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

本文介绍了一种共阴极VCSEL驱动器。克服了输出节点电流源带来的巨大寄生效应,该VCSEL驱动程序能够以25Gb/s的数据速率运行。它具有不同的上升沿/下降沿速度,能够解决VCSEL二极管的非线性问题。VCSEL驱动器采用IBM8HP BiCMOS技术制造,功耗小于60mW,核心面积为0.45mmX200mm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 25Gb/s Common-Cathode VCSEL Driver
A common-cathode VCSEL driver is presented in this paper. Overcoming the large parasitics introduced by the current source at the output node, this VCSEL driver is able to operate at data rate of 25Gb/s. With different rising/falling edge speed, it is able to address the non-linear issues of VCSEL diode. The VCSEL driver was fabricated using IBM8HP BiCMOS technology, dissipating less than 60mW and featuring a core area of 0.45mmX200mm.
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