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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)最新文献

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A Highly Integrated Chipset for 40 Gbps Wireless D-Band Communication Based on a 250 nm InP DHBT Technology 基于250nm InP DHBT技术的40gbps无线d波段高集成度通信芯片组
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978535
Sona Carpenter, Z. He, M. Bao, H. Zirath
{"title":"A Highly Integrated Chipset for 40 Gbps Wireless D-Band Communication Based on a 250 nm InP DHBT Technology","authors":"Sona Carpenter, Z. He, M. Bao, H. Zirath","doi":"10.1109/CSICS.2014.6978535","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978535","url":null,"abstract":"A highly integrated chipset comprising a transmitter (TX) and a receiver (RX) chip, based on a 250 nm InP DHBT technology for high data rate D-band (110-170 GHz) wireless communication is described. The chipset is designed for point-to-point wireless communication for 4G and 5G mobile communication infrastructure, high data rate backhaul, low-latency wireless HDTV transmission and >40 Gbps transmission over dielectric waveguide. The measured RX conversion gain is 26 dB, with a noise figure of 9 dB. The measured TX conversion gain is 20 dB. A maximum QPSK data rate of 44 Gbps is demonstrated, which exceeds the present state-of-the art in the D-band by a factor of 2.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125324315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
A 0.05-26 GHz Direct Conversion I/Q Modulator MMIC 一个0.05-26 GHz直接转换I/Q调制器MMIC
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978527
E. Iverson, M. Feng
{"title":"A 0.05-26 GHz Direct Conversion I/Q Modulator MMIC","authors":"E. Iverson, M. Feng","doi":"10.1109/CSICS.2014.6978527","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978527","url":null,"abstract":"An integrated I/Q modulator is presented, implementing a static frequency divider for local oscillator (LO) quadrature phase splitting, Gilbert cell switching mixers for direct upconversion, and fabricated in a high speed Indium-Phosphide HBT process. LO quadrature is fine-tuned by a control voltage with 0.18 degrees/mV for 2.14 GHz operation. Single-sideband conversion gain ranges from -14 to -23 dB across the LO frequency range of 50 MHz to 26 GHz. Single-carrier W-CDMA ACPR ranges from -64 dBc to -53 dBc for approximately -20 dBm output power. Output intercept point (OIP3) ranges from +14 dBm at 50 MHz to +4.6 dBm at 26 GHz.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116564809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ka Band Chip-Set for Electronically Steerable Antennas 用于电子操纵天线的Ka波段芯片组
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978564
R. Leblanc, Noelia Santos Ibeas, A. Gasmi, J. Moron
{"title":"Ka Band Chip-Set for Electronically Steerable Antennas","authors":"R. Leblanc, Noelia Santos Ibeas, A. Gasmi, J. Moron","doi":"10.1109/CSICS.2014.6978564","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978564","url":null,"abstract":"This paper presents a Ka band chipset dedicated to electronically steerable antenna systems. The first MMIC of the chipset is a multifunction chip including several amplifier stages, digitally controlled attenuator and phase shifter, a complex Transmit/Receive switching scheme and a Serial Input to Parallel Output digital circuit. The second MMIC includes a Low Noise amplifier, a Power amplifier and a Transmit/Receive switching circuitry. Both circuits present state of the art performances at frequencies above 30 GHz and allow together a huge reduction of system complexity. The circuits are fabricated using P-HEMT processes validated for Space use. Various possible architectures together with design issues and test results will be presented.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122016969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
SiGe Transmitter and Receiver Circuits for Emerging Terahertz Applications 新兴太赫兹应用的SiGe收发电路
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978576
U. Pfeiffer, J. Grzyb, R. Al Hadi, N. Sarmah, K. Statnikov, S. Malz, B. Heinemann
{"title":"SiGe Transmitter and Receiver Circuits for Emerging Terahertz Applications","authors":"U. Pfeiffer, J. Grzyb, R. Al Hadi, N. Sarmah, K. Statnikov, S. Malz, B. Heinemann","doi":"10.1109/CSICS.2014.6978576","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978576","url":null,"abstract":"This paper presents recent developments on transmitter and receiver circuit in advanced SiGe technologies for emerging applications in the sub-millimeter wave region of the electromagnetic spectrum. This includes high-power harmonic oscillators, multiplier chains, and heterodyne I/Q transmitters for terahertz signal generation, as well as direct detectors, heterodyne receivers and Radar transceivers for wide-band signal detection. The circuits are attached to a secondary silicon lens and packaged on low-cost FR4 printed circuit boards.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130824620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Status of the GaN HEMT Standardization Effort at the Compact Model Coalition 在Compact Model联盟中GaN HEMT标准化工作的现状
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978580
S. Mertens
{"title":"Status of the GaN HEMT Standardization Effort at the Compact Model Coalition","authors":"S. Mertens","doi":"10.1109/CSICS.2014.6978580","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978580","url":null,"abstract":"The Compact Model Coalition (CMC), a part of the Silicon Integration Initiative (Si2), is standardizing a compact model for Gallium Nitride High Electron Mobility Transistors (GaN HEMTs). After a global search for model candidates, eight were selected to present at a CMC meeting. In the next phase, selected candidates will be evaluated for their ability to fit a common set of hardware data. After a third round of more comprehensive testing, a standard GaN HEMT model will be selected.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124946574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
An InP MMIC Process Optimized for Low Noise at Cryo 低温低噪声InP MMIC工艺优化
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978542
P. Nilsson, J. Schleeh, N. Wadefalk, J. P. Starski, H. Rodilla, G. Alestig, J. Halonen, B. Nilsson, H. Zirath, J. Grahn
{"title":"An InP MMIC Process Optimized for Low Noise at Cryo","authors":"P. Nilsson, J. Schleeh, N. Wadefalk, J. P. Starski, H. Rodilla, G. Alestig, J. Halonen, B. Nilsson, H. Zirath, J. Grahn","doi":"10.1109/CSICS.2014.6978542","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978542","url":null,"abstract":"An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4\" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state of the art in this frequency range, and 66.3 K at 300K. Associated gain was 35.9 dB (10K) and 33.2 dB (300 K). The standard deviation at room temperature for 47 LNAs was 1.5 K for the noise and 0.3 dB for the gain.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130733439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Power Amplifier Design Optimized for Envelope Tracking 包络跟踪优化的功率放大器设计
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978573
G. Collins, J. Fisher, F. Radulescu, J. Barner, S. Sheppard, R. Worley, D. Kimball
{"title":"Power Amplifier Design Optimized for Envelope Tracking","authors":"G. Collins, J. Fisher, F. Radulescu, J. Barner, S. Sheppard, R. Worley, D. Kimball","doi":"10.1109/CSICS.2014.6978573","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978573","url":null,"abstract":"In this paper, we present the design of an inverse Class F power amplifier GaN MMIC, specifically designed for an envelope-tracking application. Power transistors are not typically characterized for the drain modulation that is fundamental to envelope tracking, and the available device models are not usually validated over the required drain bias range. Here, we used fundamental load-pull to characterize a 6×100μm GaN HEMT device over the range of drain bias voltages that would be used in the envelope-tracking PA. This data was scaled to an 8×100μm device to achieve the target output power, and these empirical load-pull models were then used in the design of the power MMIC along with harmonic design in simulation. A total of eight 8×100 μm HEMTs were used in the final design, achieving a maximum power output of 32 W at 10 GHz with a drain efficiency of greater than 45% in back-off, on a die size of less than 4 × 4 mm2 under envelope tracking.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133642330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Optical Phase-Locking and Wavelength Synthesis 光学锁相与波长合成
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978571
M. Rodwell, H. Park, M. Piels, M. Lu, A. Sivananthan, E. Bloch, Z. Griffith, M. Uteaga, L. Johansson, J. Bowers, L. Coldren
{"title":"Optical Phase-Locking and Wavelength Synthesis","authors":"M. Rodwell, H. Park, M. Piels, M. Lu, A. Sivananthan, E. Bloch, Z. Griffith, M. Uteaga, L. Johansson, J. Bowers, L. Coldren","doi":"10.1109/CSICS.2014.6978571","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978571","url":null,"abstract":"We describe techniques for phase-locked coherent optical communications, including wavelength synthesis for wavelength-division-multiplexed optical communications, compact coherent BPSK receivers, and coherent demodulation of WDM in the electrical domain. Index Terms - Coherent optical communications, phase-locked-loops, frequency synthesis, wavelength-division-multiplexing.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127247296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Development of High-Efficiency X-Band Outphasing Transmitter 高效x波段同相发射机的研制
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978547
C. Xie, David W. Cripe, J. Reyland, D. Landt, Anders Walker
{"title":"Development of High-Efficiency X-Band Outphasing Transmitter","authors":"C. Xie, David W. Cripe, J. Reyland, D. Landt, Anders Walker","doi":"10.1109/CSICS.2014.6978547","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978547","url":null,"abstract":"We describe an advanced X-band outphasing power amplifier as a promising solution to provide high power output and wide modulation bandwidth for next-generation RF digital communication. Our proposed PA system consists of a high efficiency X-band GaN HEMT based Class-E outphasing PA MMIC.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121297162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Gallium Arsenide Electro-Optic Modulators 砷化镓电光调制器
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI: 10.1109/CSICS.2014.6978557
R. Walker, M. O'Keefe, N. Cameron, H. Ereifej, T. Brast
{"title":"Gallium Arsenide Electro-Optic Modulators","authors":"R. Walker, M. O'Keefe, N. Cameron, H. Ereifej, T. Brast","doi":"10.1109/CSICS.2014.6978557","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978557","url":null,"abstract":"GaAs/AlGaAs provides an environmentally stable and rugged guided-wave system for realisation of high functionality electro-optic modulators for telecommunications, avionics and aerospace. We detail the guided-wave building-blocks required to build complex modulator components.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125384634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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