高效x波段同相发射机的研制

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI:10.1109/CSICS.2014.6978547

C. Xie, David W. Cripe, J. Reyland, D. Landt, Anders Walker

{"title":"高效x波段同相发射机的研制","authors":"C. Xie, David W. Cripe, J. Reyland, D. Landt, Anders Walker","doi":"10.1109/CSICS.2014.6978547","DOIUrl":null,"url":null,"abstract":"We describe an advanced X-band outphasing power amplifier as a promising solution to provide high power output and wide modulation bandwidth for next-generation RF digital communication. Our proposed PA system consists of a high efficiency X-band GaN HEMT based Class-E outphasing PA MMIC.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Development of High-Efficiency X-Band Outphasing Transmitter\",\"authors\":\"C. Xie, David W. Cripe, J. Reyland, D. Landt, Anders Walker\",\"doi\":\"10.1109/CSICS.2014.6978547\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We describe an advanced X-band outphasing power amplifier as a promising solution to provide high power output and wide modulation bandwidth for next-generation RF digital communication. Our proposed PA system consists of a high efficiency X-band GaN HEMT based Class-E outphasing PA MMIC.\",\"PeriodicalId\":309722,\"journal\":{\"name\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2014.6978547\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2014.6978547","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

我们描述了一个先进的x波段共相功率放大器作为一个有前途的解决方案，为下一代射频数字通信提供高功率输出和宽调制带宽。我们提出的扩音系统由高效率的x波段GaN HEMT组成，该系统基于e类同相扩音MMIC。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Development of High-Efficiency X-Band Outphasing Transmitter

We describe an advanced X-band outphasing power amplifier as a promising solution to provide high power output and wide modulation bandwidth for next-generation RF digital communication. Our proposed PA system consists of a high efficiency X-band GaN HEMT based Class-E outphasing PA MMIC.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

自引率

0.00%

发文量