FD-SOI Technology Development and Key Devices Characteristics for Fast, Power Efficient, Low Voltage SoCs

Abstract

Electronics is more and more pervasive in everyday life: smartphones, connected cars, Internet of Things... All this is not only about mobile energy efficient technologies: it is wireless and wireline connectivity, sensors. UTBB FD-SOI (Ultra Thin Body and Buried-oxide Fully Depleted Silicon On Insulator) is a planar semiconductor technology that introduced the advantages of fully depleted transistors from the 28nm technology node, which is cost optimal, allowing joining the advantages of a general purpose high speed technology with the ones of a low power one. The paper describes the development of the FD-SOI technology, the choice of devices centering, and their main characteristics, especially suited for high speed energy efficient operation, even in low voltage conditions, thanks to the their intrinsic characteristics offered by being fully depleted. Those, are not limited to digital logic devices, but extend to memory bit-cells (fast, low leakage, and operating at low voltage) and the exceptional analog characteristics of devices.