Development of High-Efficiency X-Band Outphasing Transmitter

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI:10.1109/CSICS.2014.6978547

C. Xie, David W. Cripe, J. Reyland, D. Landt, Anders Walker

引用次数: 11

Abstract

We describe an advanced X-band outphasing power amplifier as a promising solution to provide high power output and wide modulation bandwidth for next-generation RF digital communication. Our proposed PA system consists of a high efficiency X-band GaN HEMT based Class-E outphasing PA MMIC.

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高效x波段同相发射机的研制

我们描述了一个先进的x波段共相功率放大器作为一个有前途的解决方案，为下一代射频数字通信提供高功率输出和宽调制带宽。我们提出的扩音系统由高效率的x波段GaN HEMT组成，该系统基于e类同相扩音MMIC。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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