{"title":"在Compact Model联盟中GaN HEMT标准化工作的现状","authors":"S. Mertens","doi":"10.1109/CSICS.2014.6978580","DOIUrl":null,"url":null,"abstract":"The Compact Model Coalition (CMC), a part of the Silicon Integration Initiative (Si2), is standardizing a compact model for Gallium Nitride High Electron Mobility Transistors (GaN HEMTs). After a global search for model candidates, eight were selected to present at a CMC meeting. In the next phase, selected candidates will be evaluated for their ability to fit a common set of hardware data. After a third round of more comprehensive testing, a standard GaN HEMT model will be selected.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Status of the GaN HEMT Standardization Effort at the Compact Model Coalition\",\"authors\":\"S. Mertens\",\"doi\":\"10.1109/CSICS.2014.6978580\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Compact Model Coalition (CMC), a part of the Silicon Integration Initiative (Si2), is standardizing a compact model for Gallium Nitride High Electron Mobility Transistors (GaN HEMTs). After a global search for model candidates, eight were selected to present at a CMC meeting. In the next phase, selected candidates will be evaluated for their ability to fit a common set of hardware data. After a third round of more comprehensive testing, a standard GaN HEMT model will be selected.\",\"PeriodicalId\":309722,\"journal\":{\"name\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2014.6978580\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2014.6978580","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Status of the GaN HEMT Standardization Effort at the Compact Model Coalition
The Compact Model Coalition (CMC), a part of the Silicon Integration Initiative (Si2), is standardizing a compact model for Gallium Nitride High Electron Mobility Transistors (GaN HEMTs). After a global search for model candidates, eight were selected to present at a CMC meeting. In the next phase, selected candidates will be evaluated for their ability to fit a common set of hardware data. After a third round of more comprehensive testing, a standard GaN HEMT model will be selected.
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