{"title":"利用0.15µm GaN MMIC技术实现ka波段高功率放大器的小型化","authors":"K.K.-S. Kong, M. Kao, S. Nayak","doi":"10.1109/CSICS.2014.6978569","DOIUrl":null,"url":null,"abstract":"We demonstrate a compact and efficient Ka-band high power amplifier with output power of 34.5dBm at 30 GHz by using 0.15 μm GaN technology. This paper reports record compact area of 2.38 mm^2 in a Ka-band high power amplifier (HPA) class. We employed 0.15 μm GaN process on 50 μm thick SiC substrate technology to achieve high output power with high efficiency and compact design. The advantage of a GaN PA in commercial millimeter-wave market is illustrated by comparing it to similar GaAs power amplifiers.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Miniaturization of Ka-Band High Power Amplifier by 0.15 µm GaN MMIC Technology\",\"authors\":\"K.K.-S. Kong, M. Kao, S. Nayak\",\"doi\":\"10.1109/CSICS.2014.6978569\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate a compact and efficient Ka-band high power amplifier with output power of 34.5dBm at 30 GHz by using 0.15 μm GaN technology. This paper reports record compact area of 2.38 mm^2 in a Ka-band high power amplifier (HPA) class. We employed 0.15 μm GaN process on 50 μm thick SiC substrate technology to achieve high output power with high efficiency and compact design. The advantage of a GaN PA in commercial millimeter-wave market is illustrated by comparing it to similar GaAs power amplifiers.\",\"PeriodicalId\":309722,\"journal\":{\"name\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2014.6978569\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2014.6978569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Miniaturization of Ka-Band High Power Amplifier by 0.15 µm GaN MMIC Technology
We demonstrate a compact and efficient Ka-band high power amplifier with output power of 34.5dBm at 30 GHz by using 0.15 μm GaN technology. This paper reports record compact area of 2.38 mm^2 in a Ka-band high power amplifier (HPA) class. We employed 0.15 μm GaN process on 50 μm thick SiC substrate technology to achieve high output power with high efficiency and compact design. The advantage of a GaN PA in commercial millimeter-wave market is illustrated by comparing it to similar GaAs power amplifiers.
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