D. Agonafer, J. Palko, Y. Won, K. Lopez, Thomas J. Dusseault, Julie Gires, M. Asheghi, J. Santiago, K. Goodson
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High power density GaN HEMT technology can increase the capability of defense electronics systems with the reduction of CSWaP. However, thermal limitations have currently limited the inherent capabilities of this technology where transistor-level power densities that exceed 10 kW/cm2 are electrically feasible. This paper introduces the concept of an evaporative microcooling device utilizing some of the current two-phase vapor separation technologies currently being developed for water and dielectric liquids.
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