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2020 5th International Conference on Devices, Circuits and Systems (ICDCS)最新文献

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Impact on Voltage Stability With Integration of Multiple STATCOM at Different Loading Conditions 不同负载条件下多个STATCOM集成对电压稳定性的影响
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243608
R. Magadum, Nikhil R. Chitragar, S. Dodamani, P. Gopikrishna
{"title":"Impact on Voltage Stability With Integration of Multiple STATCOM at Different Loading Conditions","authors":"R. Magadum, Nikhil R. Chitragar, S. Dodamani, P. Gopikrishna","doi":"10.1109/ICDCS48716.2020.243608","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243608","url":null,"abstract":"Due to modernization, increase in the population and improvement in the life styles are accelerating the power demand in the recent years. The interconnection of networks, harvesting more power from grid integrated renewable causing drastic change in the power demand curves. This leads to poor voltage profile with more losses in the network. Many researchers are working across the globe to tackle these issues by introducing new equipments, algorithms and techniques. In this paper optimal placement of STATCOM is carried out at different loading condition under disturbance. The proposed methodology is carried out on IEEE-33 nodes network at load factor 1, 1.5 and 2 with disturbance in the network to check the effectiveness of the STATCOM. The obtained result shows new directions for enhancement of the systems parameters.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122605367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Memristor Based Cryptographic Information Processing for Secured Communication Systems 基于忆阻器的保密通信系统密码信息处理
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243573
Ashutosh Mishra, K. Sehra, S. Sahil, A. Joshi, P. Kasturi, M. Saxena
{"title":"Memristor Based Cryptographic Information Processing for Secured Communication Systems","authors":"Ashutosh Mishra, K. Sehra, S. Sahil, A. Joshi, P. Kasturi, M. Saxena","doi":"10.1109/ICDCS48716.2020.243573","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243573","url":null,"abstract":"Communication today plays a vital role as a means of transmitting energy from one place to another. This energy usually is a signal containing valuable information and needs to be transmitted securely to the intended user. In this paper, digital modulation techniques are used to modulate the binary data with the output of chaotic oscillator to bring the necessary encryption and decryption of signals in the communication system. Assessment of the system over the hardware and NI Multisim simulation confirms the validity of this approach.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120976627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Early Alert System For Sleep Apnea Disorder Using IoT 基于物联网的睡眠呼吸暂停障碍预警系统
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243559
B. Vijayalakshmi, S. Anusha, S. Padmapriya, C. Ramkumar, S. P. Bharadhwaaj, R. Priyanka
{"title":"An Early Alert System For Sleep Apnea Disorder Using IoT","authors":"B. Vijayalakshmi, S. Anusha, S. Padmapriya, C. Ramkumar, S. P. Bharadhwaaj, R. Priyanka","doi":"10.1109/ICDCS48716.2020.243559","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243559","url":null,"abstract":"SLEEP APNEA is a potentially serious disorder associated with pausing or stopping of breathing repeatedly. The monitoring of sleep apnea and its detection is very important for the society as it aids in improvement of health and also causes decrease in mortality rate. The current technologies in order to diagnose OSA requires the patients to undergo Polysomnography (PSG), a very complicated and invasive test method to be performed in a specialized center which involves many sensors and wires. Accordingly, each patient is required to stay in the same position throughout the duration of one night, thus restricting their movements and causing disturbance in sleep patterns. This paper proposes an easy, very cheap, and portable approach for the monitoring of patients with OSA using IoT (Internet of Things). The project concludes with highlighting the pros and cons of the current technologies of the current technologies which can set a map for researchers and clinicians in this developing field of study.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116410288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Live Beyond Fear: A Virtual Reality Serious Game Platform to Overcome Phobias 超越恐惧的生活:克服恐惧症的虚拟现实严肃游戏平台
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243592
S. Sharmili, R. Kanagaraj
{"title":"Live Beyond Fear: A Virtual Reality Serious Game Platform to Overcome Phobias","authors":"S. Sharmili, R. Kanagaraj","doi":"10.1109/ICDCS48716.2020.243592","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243592","url":null,"abstract":"The thesis focuses in development of a Virtual Reality based Serious Game platform for overcoming phobia, with special focus on acrophobia i.e., fear of heights. Levels of acrophobic scenarios with gradual exposure to heights is developed. The prototype includes game elements such as motivation, target and set of goals to be achieved. The serious game platform reduces the level of fear by encouraging the individual to use it again since they are challenging and attractive. The degree of fear of heights in people is evaluated using questionnaire and since it showed a significant number of people experience acrophobia, this platform may be used in treatment to overcome the same. Future studies should include the deployment of serious game platform on patients with acrophobia to measure the effectiveness of this system.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132044547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Fuel Cell Based Sapf System with Dual Mode Operation 基于燃料电池的双模式Sapf系统
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243564
N. Patnaik, A. Panda, Richa Pandey
{"title":"Fuel Cell Based Sapf System with Dual Mode Operation","authors":"N. Patnaik, A. Panda, Richa Pandey","doi":"10.1109/ICDCS48716.2020.243564","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243564","url":null,"abstract":"This paper presents a comprehensive fuel cell based shunt active power filter (SAPF) system operated in dual mode of power quality improvement and sustaining the load power requirement during supply interruption condition. The former mode of this system is based on synchronous reference frame (SRF) control algorithm and for the latter mode it is switched to sine pulse width modulation (SPWM) control. This complete system is applicable for handling the prime power quality issue of current harmonics, improving the supply side power factor by taking care of reactive power demand of load and maintaining the continuity of power supply in case of supply interruption with an alternate supply arrangement of fuel cell stack system, which is highly essential for sensitive and emergency type loads. The whole system is simulated using MATLAB/SIMULINK and the results are analyzed accordingly.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123936180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and Simulation of 22nm FinFET Structure Using TCAD 基于TCAD的22nm FinFET结构设计与仿真
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243600
R. Kalaivani, J. Pravin, S. Ashok Kumar, R. Sridevi
{"title":"Design and Simulation of 22nm FinFET Structure Using TCAD","authors":"R. Kalaivani, J. Pravin, S. Ashok Kumar, R. Sridevi","doi":"10.1109/ICDCS48716.2020.243600","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243600","url":null,"abstract":"The FINFET concept is reviewed for the enhancement of power and performance in the VLSI Optimizing circuit .FINFET is the basics for upcoming technologies because of its power utilization, performance, scalability and better control in the short channel effects. In this paper the working of FINFET is analyzed using Hfo2 dielectric material by using TCAD tool. Drain current in the circuits are optimized by using high K dielectric material Hf02. The result shows that the improvement in the device performance by using various gate work function (4.2ev to 4.6ev). Better device Structure will surely be the solution for high optimizing devices","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129098435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 624μW Variable Gain Amplifier with 45dB peak Gain using Current Controlled Degeneration 基于电流控制退化的峰值增益为45dB的624μW可变增益放大器
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243542
S. Gladson, V. Thenmozhi, M. Bhaskar
{"title":"A 624μW Variable Gain Amplifier with 45dB peak Gain using Current Controlled Degeneration","authors":"S. Gladson, V. Thenmozhi, M. Bhaskar","doi":"10.1109/ICDCS48716.2020.243542","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243542","url":null,"abstract":"This paper presents a current controlled variable gain amplifier (VGA) with a two-stage current-reuse gain cell and a tail current source for controlling the current. VGA is aiming to offer high voltage gain, low Noise Figure (NF) while operating with low-power consumption for high-performance wireless applications. The low-voltage low-power VGA is designed and implemented in UMC 180nm CMOS technology using Cadence virtuoso design tool. The proposed VGA can provide a maximum gain of 45.1dB while achieving a maximum IIP3 of 4.643dBm and minimum NF of 4.976dB. Power consumption of the VGA at maximum gain is 624.4µW from 1V supply.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"45 10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125319030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative Analysis of Junctionless FinFET and Inverted Mode FinFET as Phosphine (PH3) Gas Sensor 无结FinFET与倒模FinFET用作磷化氢(PH3)气体传感器的比较分析
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243579
Himani Dua Sehgal, Yogesh Pratap, Mridula Gupta, S. Kabra, Praveen Pal
{"title":"Comparative Analysis of Junctionless FinFET and Inverted Mode FinFET as Phosphine (PH3) Gas Sensor","authors":"Himani Dua Sehgal, Yogesh Pratap, Mridula Gupta, S. Kabra, Praveen Pal","doi":"10.1109/ICDCS48716.2020.243579","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243579","url":null,"abstract":"In this work, a comparative analysis of a junctionless mode FinFET and an inverted mode FinFET gas sensor is carried out. The sensors are designed to detect the presence of Phosphine (PH3) gas. The parameter used to evaluate the concentration of the gas molecules is change in gate work function. The catalytic gate material i.e. palladium is used in proposed work. The parameters used to detect the change in concentration of phosphine gas are change in threshold voltage, drain current characterstics- ON current, OFF current, transconductance, output conductance and ratio of ION/IOFF. The change in these parameters is used to study the response of Junctionless FinFET and Inverted mode FinFET as a phosphine gas sensor.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126974054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Design of Automatic Speed Controlling System 自动调速系统的设计
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243587
J. David, Roopa Jayasingh, Deepak Daniel, M. Joel Morris Raj, Deepika BlessyTelagathoti
{"title":"Design of Automatic Speed Controlling System","authors":"J. David, Roopa Jayasingh, Deepak Daniel, M. Joel Morris Raj, Deepika BlessyTelagathoti","doi":"10.1109/ICDCS48716.2020.243587","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243587","url":null,"abstract":"With a growing number vehicles in the world there is this key issue of rising number of accident in the world in with most are due to over speeding. Even though the Road Safety Department have taken many steps to alert the driver about the speed limits by placing many sign boards there is only a little improvement. This can be overcome by a simple but effective method of speed controlling using RF technology. With rise in manufacturing of autonomous car. This can also be implemented in them as well as in existing vehicles as it is simple. The main objective is to control the vehicles from over speeding in speed limited zones.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122189665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
MOS only voltage reference with improved line regulation for LDO voltage regulator applications MOS电压参考与改进的线路调节LDO稳压器应用
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243537
Guruprasad, K. Shama
{"title":"MOS only voltage reference with improved line regulation for LDO voltage regulator applications","authors":"Guruprasad, K. Shama","doi":"10.1109/ICDCS48716.2020.243537","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243537","url":null,"abstract":"In this paper a voltage reference circuit using only MOSFETs in 180 nm standard CMOS technology is presented. The proposed circuit does not utilize lateral or vertical BJTs since they are not well defined in a CMOS technology, they occupy large area and they cause bulk current leakage. Complementary and proportional to absolute temperature currents are generated using MOSFETs, operating in sub-threshold region. An additional negative feedback is introduced so that line regulation of reference circuit is significantly improved. In LDO voltage regulators, the line regulation of LDO is mainly dependent on line sensitivity of reference circuit. The proposed voltage reference circuit has been laid out in standard 180 nm CMOS technology. The post layout simulation results show that it produces a reference voltage of 600 mV for a minimum input supply of 1.2 V. and varies only 1.2 mV when supply voltage is varied from 1.2 V to 2 V. When temperature is swept from 0 0 C to 80 0 C, the change in the reference voltage is only 4.1 mV. Monte-Carlo statistical analysis of the circuit reveals that it is robust against local mismatch and global process variations.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131778936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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