{"title":"Implementation of the Anti Pilferage and Anti Leakage system for Fuel Tankers","authors":"K. Joshitha, Haresh R, A. N., D. T, Yashwanth V U","doi":"10.1109/ICDCS48716.2020.243553","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243553","url":null,"abstract":"Pilferage and adulteration of products on fuel tankers starts from terminals to retail outlets that create a major problem in petroleum product handling. The tankers provided with fuel filling and drain valves monitored online and an electric lock system which could be opened only with the consent of the owner can be a solution to prevent the pilferage. The driver’s mobile phone can be linked with the wifi module in the hardware setup so that the driver’s proximity with the tanker can be known. The Hardware setup comprises of Node MCU, an electric lock system, flow meter on outlet pipes and fuel Sensor. The electric lock can be opened by the consent of the owner and the level sensor is used to identify the leakage of the fuel. An additional mobile app can be provided for the driver for emergency situations such as fire hazard and from the owner’s end, tracking the driver’s location and providing consent can be done.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128873236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analysis of activity of muscles acting on ankle joint in sitting and standing from chairs of different heights","authors":"S. G. Sarate, Nivethitha M","doi":"10.1109/ICDCS48716.2020.243570","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243570","url":null,"abstract":"When a person sitting on a chair stands and sits from the standing position the weight transfers from spine to ankle and from ankle to spine. Most significant joint loads occur during stand to sit and sit to stand movement than any other activity. Slight changes in loads on the knee joint, ankle joint and the lumbar spine are linked with greater angular displacement at knee, spine and hip joints. The movement of body segments with respect to each other moves the body center mass which causes greater forces in the joints. Incorrect simple activities contribute to increased loads which lead to increase in strains and inflammation. Tibialis anterior - dorsi- flexor of the ankle and soleus - plantar-flexor of the ankle are the important muscles required for all leg activities. The activity of these two muscles were monitored in this study. The subjects were asked to sit and stand from a chair of height 17.5 cm and a podium of height 12.5 cm which can be considered as a chair shorter than an ideal chair. An accelerometer mounted on the cervical spine was used to determine the position of the subjects. The EMG data epochs were classified using the accelerometer signal. Our study result shows that there is a significant difference in muscle activity between chair and podium while performing sit to stand actions and stand to sit actions observed from EMG signal analysis.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130767569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Temperature effects on an HfO2-TiO2-HfO2 stack layer resistive random access memory cell for low power applications","authors":"N. A, N. M. Sivamangai, R. Naveenkumar","doi":"10.1109/ICDCS48716.2020.243597","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243597","url":null,"abstract":"In this paper we analyzed the forming voltage (Vf) and resistive switching characteristics of the fabricated nano structured trilayer resistive switching device (Pt/HfO2/TiO2/HfO2/Pt). Standard fabrication process is opted with a post metal annealing (PMA) process to diminish the forming voltages of stack layer resistive random access memory (RRAM) cells. Result reveals after the post metal annealing, the Vf is reduced to 3.6 V from 4.4 V at room temperature (25°C). In addition at high background temperature (80°C) the Vf value is diminished significantly (3.2 V) compared to lower temperatures, 50° C and 25° C. We optimized, the forming environment temperature (80° C), compliance current (30 µA) for the further reduction of Vf value.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132305995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Performance Study on Nonlinearity Distortion Mitigation in Modulated Optical Interconnects based on Machine Learning","authors":"S. Karthik, R. Jeyachitra","doi":"10.1109/ICDCS48716.2020.243566","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243566","url":null,"abstract":"In the recent days Machine Learning algorithms are widely used in the Optical domain. In this paper we have applied machine learning algorithm to mitigate the modulation nonlinearity distortions occurring in the Optical Interconnections. Optical interconnections are widely used due to the demerits of its electrical counterpart in terms of latency and power. A machine learning based detection scheme using complete binary tree Support Vector Machines (CBT-SVM) is proposed for the modulation nonlinearity mitigation and bit error rate (BER) estimation. An Optical interconnection link is modelled using the simulation setup in order to generate the datasets required for the experiment. A PRBS generator is used to modulate a VCSEL (Vertical Cavity Surface Emitting Laser) in order to produce PAM-4 signal. Controlled amounts of modulation non linarites can be introduced by varying bias currents and temperature of VCSEL. Various datasets were generated by varying these parameters. ML based detection scheme was employed using CBT SVMs and the bit error rates were estimated. The proposed technique has the potential to be used at the receiver side for intelligent signal analysis and optical performance monitoring. Also, we observed that by using CBT SVM we are able to achieve better BER (1e−8) at improved data rates (10Gbps). The proposed model using CBT SVM machine learning algorithm can mitigate the modulation nonlinearity distortion.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122531027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Machine Vision and Machine Learning for Intelligent Agrobots: A review","authors":"Bini D, Pamela D, Shajin Prince","doi":"10.1109/ICDCS48716.2020.243538","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243538","url":null,"abstract":"An intelligent precise autonomous farming by an agricultural robot achieves the farm duties possibly harvesting, weed detection, disease identification, pruning and fertilizing deals with path planning and mapping of the unstructured and uncertain environment. A machine vision-based Agrobots along with artificial intelligence provides unmanned ground vehicle and unmanned aerial vehicle to navigate the path and to implement the agricultural task for minimizing labour and increasing quality food production. The perception-related work uses a machine learning algorithm to detect the feature and analyze the agricultural tasks for the autonomous machine. The trained data sets create the ability for robots to learn and decide the farm practices. The dawn of autonomous system design gives us the outlook to develop a wide range of flexible agronomic equipment based on multi-robot, smart machines and human-robot systems which lessen waste, progresses economic feasibility also reduces conservational impact and intensifies food sustainability. The multi-tasking Agrobots overcomes the effort of farmers in agricultural husbandry, independent of the climatic conditions. In this paper, a study on Agrobots effective in a diverse environment, its control and action process conjoined with mapping and detection using machine vision and machine learning algorithms are distinguished.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117339563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Performance Assessment of Polarity Tunable- Ferroelectric-Field Effect Transistor at High Temperature —Part II","authors":"P. Pandey, H. Kaur","doi":"10.1109/ICDCS48716.2020.243575","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243575","url":null,"abstract":"In the present work, we have developed a drain current model of Polarity tunable-Ferroelectric-Field Effect Transistor (PT-FE-FET) and examined various device characteristics at elevated temperatures. Due to negative capacitance phenomenon, the proposed device is delivering high values of drain current in comparison to conventional device. Also, at high temperatures, proposed PT-FE-FET exhibits superior high values of various Figures of Merits such as transconductance, transconductance generation factor and cutoff frequency. Thus, PT-FE-FET is a suitable candidate for energy-efficient analog applications.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132487707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Monitoring & Controlling of Substation Using IoT in Distribution Power Grid","authors":"Kalpana B. Tarase, V. Panchade","doi":"10.1109/ICDCS48716.2020.243550","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243550","url":null,"abstract":"A new smart voltage and current monitoring system (SVCMS) technique is proposed. It monitors a single phase electrical system using an Arduino platform as a microcontroller to read the voltage and current from sensors and then wirelessly send the measured data to monitor the results using a new Android application. The integrated SVCMS design uses an Arduino Uno as the microcontroller to measure the results from voltage and current sensors and then send this data, after calculation, to the Android smartphone device of an end user using Wi-Fi module. The Arduino Uno controller and ESP8266 W-Fi module are a cheap microcontroller and wireless device, respectively. The new Android smartphone application that monitors the voltage and current measurements uses the open source MIT App Inventor 2 software. It allows for monitoring some elementary fundamental voltage power quality properties. The system also calculates frequency and power factor of line using zero crossing detectors and from calculation of voltage and current respectively.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128168418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
SB Shamena Selas, J. Vijay, S. Arun Karthick, S. Saraswathi
{"title":"Preparation and Analysis of Nano materials for Smart textile in Continuous Monitoring of Physiological Parameters","authors":"SB Shamena Selas, J. Vijay, S. Arun Karthick, S. Saraswathi","doi":"10.1109/ICDCS48716.2020.243605","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243605","url":null,"abstract":"Smart textiles are the textiles used for their extended features, such as, antibacterial, flame retardancy, UV protection, anti-static, water repelling and electro-conductivity. In this paper, wearable textile-based electrodes for physiological measurement has been proposed. The fabric based conductive material used in the textile electrode provides comfort to the user. For making the fabric conductive, PEDOT:PSS solution has been used. Together with it, silver nanoparticles and copper nanoparticles were blended for better conductivity. For preparation of silver and copper nanoparticles, a reduction approach using sodium borohydride was done. The synthesized copper and silver nanoparticles were found to be highly pure with no Silver or Copper oxide on the surface. Silver nanoparticles are very good at absorbing light. The synthesis of silver nano particles was done using the chemical reduction method of Silver Nitrate by Sodium Borohydride whereas for copper nanoparticles, reduction method was done using Sodium Borohydride. The particle aggregation of silver nanoparticles was prevented by the addition of Sodium Lauryl Sulphate. Further, they were coated on the fabric and then validated with various tests.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116086378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A detailed review on Double Gate and Triple Gate Tunnel Field Effect Transistors","authors":"A. S. Geege, N. Armugam, P. Vimala, T. Samuel","doi":"10.1109/ICDCS48716.2020.243606","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243606","url":null,"abstract":"In the last three decades, Scaling of complementary metal-oxide semiconductor (CMOS) technology been gateway to continual development in the silicone basis semiconductor industry. Nevertheless, as technology scaling reaches the nanometer system, CMOS devices face many serious issues such as enhanced leakage currents, on-current difficulties, large variations in parameters, poor reliability and yield, higher manufacturing costs, and so on. The Tunnel field-effect transistor (TFET) suggested as a most propitious option compared to CMOS devices. TFET is suitable because of its steep slope possibilities and the corresponding benefits in functioning at limited supply voltage. In this paper, we explored different interface structures related to the Double Gate TFET(DG-TFET) and Triple Gate TFET(TG-TFET).","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117354751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sachin Kumar, S. Chander, DS Rawal Samuder Gupta, Mridula Gupta
{"title":"Equivalent Channel Temperature in GaN HEMT with Field Plate","authors":"Sachin Kumar, S. Chander, DS Rawal Samuder Gupta, Mridula Gupta","doi":"10.1109/ICDCS48716.2020.243582","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243582","url":null,"abstract":"This work presents the analysis of electrical parameter drain current of gallium nitride (GaN) based high electron mobility transistor (HEMT) with field plate. The analysis has been done by using the technology computer-aided design (TCAD) simulation software on the basis of temperature profile. Channel temperature is used as the main parameter because this is responsible for degradation of electrical performance of the device. GaN HEMT of gate length 0.25 μm with field plate has been used for simulations. Equivalent channel temperature has been studied for this device which is more relevant in the study of thermal analysis.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"135 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124259529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}