Performance Assessment of Polarity Tunable- Ferroelectric-Field Effect Transistor at High Temperature —Part II

Abstract

In the present work, we have developed a drain current model of Polarity tunable-Ferroelectric-Field Effect Transistor (PT-FE-FET) and examined various device characteristics at elevated temperatures. Due to negative capacitance phenomenon, the proposed device is delivering high values of drain current in comparison to conventional device. Also, at high temperatures, proposed PT-FE-FET exhibits superior high values of various Figures of Merits such as transconductance, transconductance generation factor and cutoff frequency. Thus, PT-FE-FET is a suitable candidate for energy-efficient analog applications.