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2020 5th International Conference on Devices, Circuits and Systems (ICDCS)最新文献

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Analysis of OSNR and Data Rate Selection Using ML Techniques for Optical Networks 基于ML技术的光网络OSNR和数据速率选择分析
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243565
S. Vishwakarma, R. Jeyachitra
{"title":"Analysis of OSNR and Data Rate Selection Using ML Techniques for Optical Networks","authors":"S. Vishwakarma, R. Jeyachitra","doi":"10.1109/ICDCS48716.2020.243565","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243565","url":null,"abstract":"Optical networks are preferred over other wireless network in modern world due to better link quality in long haul networks. The basic parameters that define any optical network is Quality factor, OSNR, BER etc. As the length of optical fiber is increased then link quality is diminished due to attenuation, PMD, and various other non nonlinear factors. Our aim of this paper is to compute the path metric for Optical OFDM network with the higher data rates as 100Gbps, 200Gbps, 300Gbps, 400Gbps and 500Gbps and with varying the fiber length. Hence, to take all non-linearity and attenuation effect into account and see how our system behaves. We employed fiber length from 1km to 130km with attenuation constant of 0.2dB/km. By the incorporation of machine learning cognition is introduced in network control plane. Our main idea is to make intelligent network layer by means of this Adaptive Neural Fuzzy Inference System such that any path with any data rate demanding for connection in any single node network. Based on their path metric i.e. OSNR and performance of specific data rate for that node to node length the network will pass the data with required data rate, or due to poor performance in the require data rate lesser data rate path is assigned.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116349856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Image compression using HAAR discrete wavelet transform 图像压缩采用HAAR离散小波变换
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243596
Hemalatha Kanagaraj, V. Muneeswaran
{"title":"Image compression using HAAR discrete wavelet transform","authors":"Hemalatha Kanagaraj, V. Muneeswaran","doi":"10.1109/ICDCS48716.2020.243596","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243596","url":null,"abstract":"Image Compression aims at minimal the Storage and for the easy transmission Without affecting pictures quality. In this paper HAAR wavelet based Discrete Wavelet Transform (DWT) is done for the effective and efficient image compression..HAAR DWT provides an easy way of compression as the coefficient are either 1 or -1.The wavelet transforms are used for the time and frequency analysis. In this paper higher compression ratio is obtained after three levels of decompositon. The decomposed can be reconstructed without appreciable loss in the original image.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116832491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Improving the prediction accuracy of Parkinson’s Disease based on pattern techniques 基于模式技术提高帕金森病预测精度
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243578
S. Priya, A. J. Rani, Neha Ubendran
{"title":"Improving the prediction accuracy of Parkinson’s Disease based on pattern techniques","authors":"S. Priya, A. J. Rani, Neha Ubendran","doi":"10.1109/ICDCS48716.2020.243578","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243578","url":null,"abstract":"Parkinson’s Disease is a locomotive disorder commonly found among elders and causes various physical prodromes in an affected personnel. Freezing of Gait is a prominent symptom and gait data may be used to identify the occurrence of this event. The proposed study employs binary pattern recognition such as Local Binary Pattern and Extended Local Binary Pattern to transform gait data into a normal distribution and then extract statistical features such as skewness, kurtosis and etc. The procured features were then classified by different classifiers to determine the model with highest performance. The performance metrics evaluated were accuracy, precision and recall, and an accuracy of 98.82% were achieved for the classifier Logistic Regression.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117081352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Investigation of AlGaN/GaN HEMT Breakdown analysis with Source field plate length for High power applications 大功率应用中考虑源场极板长度的AlGaN/GaN HEMT击穿分析
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243589
G. D, D. Nirmal, A. L, Brigis Roy, Yu-Lin Chen, T. Yu, W. Yeh, Godwinraj D
{"title":"Investigation of AlGaN/GaN HEMT Breakdown analysis with Source field plate length for High power applications","authors":"G. D, D. Nirmal, A. L, Brigis Roy, Yu-Lin Chen, T. Yu, W. Yeh, Godwinraj D","doi":"10.1109/ICDCS48716.2020.243589","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243589","url":null,"abstract":"Breakdown characteristic of GaN-HEMT with field plate (FP) technique is investigated. Source field plate length (LFP) is varied and its impact on breakdown voltage is studied. The investigation of GaN-HEMT is carried out using Technology Computer Aided Design (TCAD). Various physical models such as mobility, polarization and recombination models are used to tune the simulation. It is observed that breakdown voltage enhances source field plate length. It is also observed that VBR shows less dependency for LFP > 4µm.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128562170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
ICDCS 2020 Author Index ICDCS 2020作者索引
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/icdcs48716.2020.9075581
{"title":"ICDCS 2020 Author Index","authors":"","doi":"10.1109/icdcs48716.2020.9075581","DOIUrl":"https://doi.org/10.1109/icdcs48716.2020.9075581","url":null,"abstract":"","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131047365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quasi-Ballistic Transitions in AlGaN/SiC Heterojunction Bipolar Transistors AlGaN/SiC异质结双极晶体管的准弹道跃迁
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243543
C. J. Praharaj
{"title":"Quasi-Ballistic Transitions in AlGaN/SiC Heterojunction Bipolar Transistors","authors":"C. J. Praharaj","doi":"10.1109/ICDCS48716.2020.243543","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243543","url":null,"abstract":"The effect of base scaling on the performance of wurtzite n-p-n AlGaN/SiC HBTs is investigated using analytical expressions. The transition to the quasi-ballistic base transport regime is identified within the free path formalism. The effect of spontaneous and piezoelectric polarization on the HBT characteristics is studied. Getting current gains of 200 or more becomes extremely difficult without extreme base width scaling for base carrier concentrations of > 1×1019 cm-3, required for obtaining high maximum frequency of oscillation fmax. Since the base transit times tend to be large for these HBTs, the tradeoff of frequency versus power is not seen except for devices scaled to mesoscopic base dimensions. The impact of dislocation generation in AlGaN emitters with high lattice mismatch to the GaN base on the transistor characteristics are also studied within a Shockley-Read-Hall type model for recombination at dislocation sites.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130834543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Real-time Scene Change Detection with Object Detection for Automated Stock Verification 实时场景变化检测与自动库存验证的对象检测
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243571
Sandeep Kumar Yedla, V. Manikandan, P. V.
{"title":"Real-time Scene Change Detection with Object Detection for Automated Stock Verification","authors":"Sandeep Kumar Yedla, V. Manikandan, P. V.","doi":"10.1109/ICDCS48716.2020.243571","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243571","url":null,"abstract":"Automation is a process of utilizing technology to reduce human efforts. In this paper, we propose a computer vision-based automated system for stock management in the supermarkets. The proposed system will help to reduce the manpower required in a supermarket by continuously monitoring the availability product in the supermarket and reporting the useful information to the concerned person automatically. The key idea behind the proposed scheme is that a few low-cost cameras will be placed in the supermarket which will help to capture the videos of the product racks in the supermarket. The presence of human beings are identified by using a structural similarity index (SSIM) based scene change detection technique, further, an object detection technique will be used to count the number of items present in the specific p roduct r ack. If t he number of items present in a particular rack goes below a threshold limit, a short message service (SMS) and/or email will go the concerned authority. To make it more comfortable, a product identifier ( printed) w ill b e k ept j ust b elow t he p roduct racks. An optical character recognition module in the proposed scheme will identify the product identifier a nd i t w ill b e m entioned in the SMS or email which will help the supervisor for scheduling the replacement of the items in the racks. The experimental study is carried out by placing sample items on a rack and the mobile camera is used as an IP camera with the help IP webcam android application for the monitoring purpose. The experimental study shows that the proposed scheme will work reliably in a supermarket environment.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"69 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113992788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Device-Level Performance Comparison of Some Pocket Engineered III-V/Si Hetero-Junction Vertical Tunnel Field Effect Transistor 几种口袋工程III-V/Si异质结垂直隧道场效应晶体管的器件级性能比较
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243576
M. Tripathy, Ashish Kumar Singh, S. Chander, P. Singh, K. Baral, S. Jit
{"title":"Device-Level Performance Comparison of Some Pocket Engineered III-V/Si Hetero-Junction Vertical Tunnel Field Effect Transistor","authors":"M. Tripathy, Ashish Kumar Singh, S. Chander, P. Singh, K. Baral, S. Jit","doi":"10.1109/ICDCS48716.2020.243576","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243576","url":null,"abstract":"This work reports a comparative study of vertically grown III-V/Si heterojunction based n-type tunnel field effect transistor (TFET) architectures: GaSb/Si heterojunction vertical TFET with source pocket and InAs/Si heterojunction vertical TFET with source pocket. For the first time GaSb/Si heterojunction based vertical TFET is proposed here whereas InAs/Si based heterojunction TFET is well explored in literature. Low band gap semiconductor like InAs and GaSb are considered in source region of TFET to reduce the tunneling width for enhancing ON-current. Source pocket is adopted to enhance the sub-threshold performance of the devices. Performance comparison is done in terms of different dc parameters like average sub-threshold swing (SS), ION, IOFF, threshold voltage (VT) and ION/IOFF ratio of the TFETs presented for study. In addition to this, the intrinsic capacitance like CGD and temperature reliability studies are done for both the devices presented for study.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"1 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114001248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Internet of Medical Things (IoMT) - An overview 医疗物联网(IoMT) -概述
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243558
S. Vishnu, S. Ramson, R. Jegan
{"title":"Internet of Medical Things (IoMT) - An overview","authors":"S. Vishnu, S. Ramson, R. Jegan","doi":"10.1109/ICDCS48716.2020.243558","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243558","url":null,"abstract":"Internet of Things (IoT) plays a vital role in the field of healthcare. The development of smart sensors, smart devices, advanced lightweight communication protocols made the possibility of interconnecting medical things to monitor biomedical signals and diagnose the diseases of patients without human intervention and termed as Internet of Medical Things (IoMT). This paper portrays an overview of Internet of Medical Things based remote healthcare, tracking ingestible sensors, mobile health, smart hospitals, enhanced chronic disease treatment.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115640522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 102
Diagnosis of Parkinson’s Disease using Fast Fourier Transform 应用快速傅里叶变换诊断帕金森病
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243580
S. Priya, A. J. Rani, Soundarya Su Ma
{"title":"Diagnosis of Parkinson’s Disease using Fast Fourier Transform","authors":"S. Priya, A. J. Rani, Soundarya Su Ma","doi":"10.1109/ICDCS48716.2020.243580","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243580","url":null,"abstract":"The locomotive impairment owing to the deterioration of neurons in the substantia nigra that generates dopamine is known as Parkinson’s Disease. In this study, numerous techniques employed by the investigators has been exemplified. Fast Fourier Transform has been proposed for eliciting the features from the gait signals. The prognostication of PD is performed by multiple classifiers and good accuracy, precision, F1 score, and recall has been attained. The highest accuracy of 93.10% has been achieved by Naïve Bayes for the classification.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114508233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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