大功率应用中考虑源场极板长度的AlGaN/GaN HEMT击穿分析

2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI:10.1109/ICDCS48716.2020.243589

G. D, D. Nirmal, A. L, Brigis Roy, Yu-Lin Chen, T. Yu, W. Yeh, Godwinraj D

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引用次数: 7

摘要

利用场极板(FP)技术研究了GaN-HEMT的击穿特性。研究了源场极板长度变化对击穿电压的影响。采用计算机辅助设计(TCAD)技术对GaN-HEMT进行了研究。利用各种物理模型如迁移率模型、极化模型和复合模型来调整模拟。观察到击穿电压增大了源场极板长度。还观察到VBR对LFP > 4µm的依赖性较小。

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Investigation of AlGaN/GaN HEMT Breakdown analysis with Source field plate length for High power applications

Breakdown characteristic of GaN-HEMT with field plate (FP) technique is investigated. Source field plate length (LFP) is varied and its impact on breakdown voltage is studied. The investigation of GaN-HEMT is carried out using Technology Computer Aided Design (TCAD). Various physical models such as mobility, polarization and recombination models are used to tune the simulation. It is observed that breakdown voltage enhances source field plate length. It is also observed that VBR shows less dependency for LFP > 4µm.

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2020 5th International Conference on Devices, Circuits and Systems (ICDCS)

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