发布求助
文献互助 智能选刊 最新文献

2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)最新文献

筛选
英文 中文
Artificial neural network compact model for TFTs tft的人工神经网络压缩模型
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785057
Q. Chen, G. Chen
{"title":"Artificial neural network compact model for TFTs","authors":"Q. Chen, G. Chen","doi":"10.1109/CAD-TFT.2016.7785057","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785057","url":null,"abstract":"This paper reports a TFT compact modeling methodology based on artificial neural networks (ANNs). Both drain current and gate capacitance are modeled with good accuracy. Extendability to different W/L ratios is also tested.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133635596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Heart rate/impulse monitoring using autonomous PVDF-integrated dual-gate thin-film transistor 采用自主pvdf集成双栅薄膜晶体管进行心率/脉冲监测
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785041
A. Rasheed, E. Iranmanesh, W. Li, A. Andrenko, K. Wang
{"title":"Heart rate/impulse monitoring using autonomous PVDF-integrated dual-gate thin-film transistor","authors":"A. Rasheed, E. Iranmanesh, W. Li, A. Andrenko, K. Wang","doi":"10.1109/CAD-TFT.2016.7785041","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785041","url":null,"abstract":"In wearable electronics, autonomous sensor can potentially ease the usage of bulky battery and eventually lead to a sustainable system. In this paper, polyvinylidene fluoride (PVDF) piezoelectric film-integrated dual-gate thin-film transistor (TFT) is utilized to monitor human vital signs such as heart rate or impulse rate. The voltage generated by the PVDF from the impulse itself drives the TFT that rectifies and converts impulse signal to the weak current signal feeding to the low-noise amplifier. The preliminary results of such device in addition to system design of chip-based sensor-integrated RFID tag are addressed to unveil the promising applications in wearable electronics.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133611283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ambient effects on the light illumination stability of amorphous InGaZnO thin film transistors 环境对非晶InGaZnO薄膜晶体管光照稳定性的影响
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785039
J. Xu, H. Xie, G. Liu, L. Zhang, X. Tong, C. Dong
{"title":"Ambient effects on the light illumination stability of amorphous InGaZnO thin film transistors","authors":"J. Xu, H. Xie, G. Liu, L. Zhang, X. Tong, C. Dong","doi":"10.1109/CAD-TFT.2016.7785039","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785039","url":null,"abstract":"The light illumination stability of amorphous InGaZnO thin film transistors (a-IGZO TFTs) under various ambient gases was investigated, where oxygen and moisture were proved to be responsible for the improving effect of the ambient air on the light illumination stability of a-IGZO TFTs.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"s1-2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125997899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design methodology for a fingerprint sensor-integrated display pixel and array based on dual-gate a-Si:H photosensitive TFT 基于双栅a- si:H光敏TFT的指纹传感器集成显示像素和阵列设计方法
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785052
H. Li, H. Ou, J. Chen, S. Deng, N. Xu, K. Wang
{"title":"Design methodology for a fingerprint sensor-integrated display pixel and array based on dual-gate a-Si:H photosensitive TFT","authors":"H. Li, H. Ou, J. Chen, S. Deng, N. Xu, K. Wang","doi":"10.1109/CAD-TFT.2016.7785052","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785052","url":null,"abstract":"This paper aims to provide a design methodology for fingerprint-sensor-integrated display pixel and array based on dual-gate photosensitive amorphous silicon (a-Si:H) thin-film transistor (TFT).","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130245672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new P-type shift register with detection function for flexible display 一种具有柔性显示检测功能的新型p型移位寄存器
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785053
N. Yang, H. Zhu, S. Hu, T. Zhang, J. Zhang, X. Gao, X. Huang
{"title":"A new P-type shift register with detection function for flexible display","authors":"N. Yang, H. Zhu, S. Hu, T. Zhang, J. Zhang, X. Gao, X. Huang","doi":"10.1109/CAD-TFT.2016.7785053","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785053","url":null,"abstract":"A new p-type shift register for flexible display is proposed in this paper to solve the flexible panel issues. When the panel cannot work well, the P-type shift register can quickly detect which line of circuits has abnormal output, further helping us find out defects of panel. The shift register is not only used to drive the pixel circuits, but also used to detect every line station. Furthermore, the new register consists of only 10 TFTs and 2 capacitors, which helps reduce the layout area and increase the yields of the panel. Simulation results show that the p-type shift register can work well.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124283205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Subthreshold operation of PVDF-integrated dual- gate thin-film transistor for tactile sensing 用于触觉传感的pvdf集成双栅极薄膜晶体管的亚阈值操作
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785059
W. Li, E. Iranmanesh, A. Rasheed, H. Ou, J. Chen, K. Wang
{"title":"Subthreshold operation of PVDF-integrated dual- gate thin-film transistor for tactile sensing","authors":"W. Li, E. Iranmanesh, A. Rasheed, H. Ou, J. Chen, K. Wang","doi":"10.1109/CAD-TFT.2016.7785059","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785059","url":null,"abstract":"This paper presents a piezoelectric-charge-gated thin-film transistor (TFT) operated in the subthreshold region intended for tactile sensing. The TCAD simulation has been conducted to detail the working principles of the device in the subthreshold region together with experimental results on a fullyintegrated sensor using polyvinylidene difluoride (PVDF) and a- Si:H dual-gate TFT.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121908221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Computable flexible electronics: circuits exploring for image filtering accelerator with OTFT 可计算柔性电子学:带OTFT的图像滤波加速器电路探索
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785040
Z. Liu, N. Wu, F. Qiao, Q. Wei, X. Guo, Y. Liu, H. Yang
{"title":"Computable flexible electronics: circuits exploring for image filtering accelerator with OTFT","authors":"Z. Liu, N. Wu, F. Qiao, Q. Wei, X. Guo, Y. Liu, H. Yang","doi":"10.1109/CAD-TFT.2016.7785040","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785040","url":null,"abstract":"Flexible electronic devices are widely adopted in fields of sensors, wearable equipments, RFID and large-area applications, for their features of bending and stretching. However, relatively fewer research works on computation with flexible electronic devices are reported, due to their poor carrier mobility and stability. In this paper, a novel circuit architecture of image filtering accelerator using Organic Thin-film transistor (OTFT), which could realize real-time image signal convolution in analog domain, is proposed.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"179 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123263577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Physical modeling of AOS TFTs based on symmetric quadrature method considering degenerate regime 基于考虑退化状态的对称正交法的AOS tft物理建模
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785042
J. Fang, W. Deng, X. Ma, W. Wu, J. Huang
{"title":"Physical modeling of AOS TFTs based on symmetric quadrature method considering degenerate regime","authors":"J. Fang, W. Deng, X. Ma, W. Wu, J. Huang","doi":"10.1109/CAD-TFT.2016.7785042","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785042","url":null,"abstract":"Explicit analytical solutions to the surface potential and current of amorphous oxide semiconductors TFTs are presented. By reformulating Lambet function as two different exponential terms in different cases, we avoid much of the complexity that degeneration induces. Symmetric quadrature method is adopted here. The model shows a good agreement with the experimental data and is suitable for circuit simulations.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133093294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Three-dimensional fin-shaped dual-gate photosenstive a-Si:H thin-film transistor for low dose X-ray imaging 用于低剂量x射线成像的三维鳍形双栅光敏a-Si:H薄膜晶体管
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785058
H. Ou, S. Deng, N. Xu, J. Chen, K. Wang
{"title":"Three-dimensional fin-shaped dual-gate photosenstive a-Si:H thin-film transistor for low dose X-ray imaging","authors":"H. Ou, S. Deng, N. Xu, J. Chen, K. Wang","doi":"10.1109/CAD-TFT.2016.7785058","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785058","url":null,"abstract":"This work reports on a novel dual-gate photosensitive amorphous silicon (a-Si:H) thin-film transistor (TFT) for low-level light detection. To enhance carrier collection and light absorption while maintaining decent switching performance, a three-dimensional (3D) fin-shaped channel is designed and verified. As a result of field strengthening particularly nearby the contact regions, the sensitivity parameter γDark=–0.84 is obtained. Hence, the device tends to have a wider dynamic range compared with the previous Pi-shaped and planar structures [1, 2]. The TFT is very sensitive to the light of 550 nm and, making it a sound promise for low-dose indirect-conversion X-ray imaging.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124644430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low voltage organic thin-film transistor with reduced sub-gap DOS for power efficient logic circuits 低电压有机薄膜晶体管与减少子间隙DOS的功率高效逻辑电路
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785046
J. Zhao, W. Tang, P. Yu, X. Guo
{"title":"Low voltage organic thin-film transistor with reduced sub-gap DOS for power efficient logic circuits","authors":"J. Zhao, W. Tang, P. Yu, X. Guo","doi":"10.1109/CAD-TFT.2016.7785046","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785046","url":null,"abstract":"Circuit performance of low voltage organic thinfilm transistors (OTFTs) using two different approaches including enlarging the gate dielectric capacitance with large permittivity (high-k) gate dielectric material and reducing the sub-gap density-of-states (DOS) at the channel two different approaches were compared by device and circuit hybrid simulations. The simulation results show that low-voltage OTFTs with reduced sub-gap DOS strategy can help to achieve faster and more power efficient circuits.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127072343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信