用于触觉传感的pvdf集成双栅极薄膜晶体管的亚阈值操作

2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI:10.1109/CAD-TFT.2016.7785059

W. Li, E. Iranmanesh, A. Rasheed, H. Ou, J. Chen, K. Wang

{"title":"用于触觉传感的pvdf集成双栅极薄膜晶体管的亚阈值操作","authors":"W. Li, E. Iranmanesh, A. Rasheed, H. Ou, J. Chen, K. Wang","doi":"10.1109/CAD-TFT.2016.7785059","DOIUrl":null,"url":null,"abstract":"This paper presents a piezoelectric-charge-gated thin-film transistor (TFT) operated in the subthreshold region intended for tactile sensing. The TCAD simulation has been conducted to detail the working principles of the device in the subthreshold region together with experimental results on a fullyintegrated sensor using polyvinylidene difluoride (PVDF) and a- Si:H dual-gate TFT.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Subthreshold operation of PVDF-integrated dual- gate thin-film transistor for tactile sensing\",\"authors\":\"W. Li, E. Iranmanesh, A. Rasheed, H. Ou, J. Chen, K. Wang\",\"doi\":\"10.1109/CAD-TFT.2016.7785059\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a piezoelectric-charge-gated thin-film transistor (TFT) operated in the subthreshold region intended for tactile sensing. The TCAD simulation has been conducted to detail the working principles of the device in the subthreshold region together with experimental results on a fullyintegrated sensor using polyvinylidene difluoride (PVDF) and a- Si:H dual-gate TFT.\",\"PeriodicalId\":303429,\"journal\":{\"name\":\"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)\",\"volume\":\"94 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAD-TFT.2016.7785059\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAD-TFT.2016.7785059","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种工作在阈下区域的压电充电薄膜晶体管(TFT)，用于触觉传感。通过TCAD仿真详细介绍了该器件在亚阈值区域的工作原理，并结合了采用聚偏二氟乙烯(PVDF)和a- Si:H双栅TFT的全集成传感器的实验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Subthreshold operation of PVDF-integrated dual- gate thin-film transistor for tactile sensing

This paper presents a piezoelectric-charge-gated thin-film transistor (TFT) operated in the subthreshold region intended for tactile sensing. The TCAD simulation has been conducted to detail the working principles of the device in the subthreshold region together with experimental results on a fullyintegrated sensor using polyvinylidene difluoride (PVDF) and a- Si:H dual-gate TFT.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)

自引率

0.00%

发文量