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2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)最新文献

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The applications of OECTs in supercapacitor balancing circuits oect在超级电容平衡电路中的应用
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785048
V. Keshmiri, R. Forchheimer, D. Tu
{"title":"The applications of OECTs in supercapacitor balancing circuits","authors":"V. Keshmiri, R. Forchheimer, D. Tu","doi":"10.1109/CAD-TFT.2016.7785048","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785048","url":null,"abstract":"In this paper, we investigate using OECTs in differential amplifiers and cell voltage equalizers for supercapacitor balancing circuits. The differential amplifier based on OECTs can sense voltage difference and the voltage equalizer consisting of a microcontroller and OECTs can be used to charge supercapacitors to desired voltages.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124787085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Printed thin-film transistors and circuits based on sorted semiconducting single-walled carbon nanotubes 基于分选半导体单壁碳纳米管的印刷薄膜晶体管和电路
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785045
Q. Xu, J. Zhao, T. Liu, Z. Cui, L. Mo
{"title":"Printed thin-film transistors and circuits based on sorted semiconducting single-walled carbon nanotubes","authors":"Q. Xu, J. Zhao, T. Liu, Z. Cui, L. Mo","doi":"10.1109/CAD-TFT.2016.7785045","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785045","url":null,"abstract":"Here, we reported a valid approach to sort largediameter semiconducting single-walled carbon nanotubes (sc- SWCNTs) from commercial SWCNTs using new organic conjugated compounds and achieved more than 10 highperformance printable sc-SWCNTs inks. Print p-type and n-type TFT arrays and CMOS inverters based on sorted sc-SWCNTs were obtained on rigid and flexible substrates. Printed TFTs exhibited low operating voltage, small hysteresis, high mobility and on/off ratios. Furthermore, printed circuits also showed good performance.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"637 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123341849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Technology independent yield-aware place & route strategy for printed electronics gate array circuits 印刷电子门阵列电路的技术独立产率感知位置和路径策略
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785047
M. Llamas, J. Carrabina, L. Terés
{"title":"Technology independent yield-aware place & route strategy for printed electronics gate array circuits","authors":"M. Llamas, J. Carrabina, L. Terés","doi":"10.1109/CAD-TFT.2016.7785047","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785047","url":null,"abstract":"We present a new Placement and Routing (P&R) strategy for implementing digital Organic/Flexible/Printed Electronics (PE) circuits based on an Inkjet-configurable Gate Array (IGA) design style together with digital printing personalization.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131123892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation for unidirectional ion flow in TFT-LCDs induced by AC-pixel-driving signals 交流像素驱动信号诱导tft - lcd中单向离子流的模拟
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785050
M. Sakamoto
{"title":"Simulation for unidirectional ion flow in TFT-LCDs induced by AC-pixel-driving signals","authors":"M. Sakamoto","doi":"10.1109/CAD-TFT.2016.7785050","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785050","url":null,"abstract":"Ion flow model for thin-film-transistor liquid crystal displays (TFT-LCDs) is proposed, and a simulation based on this model was conducted to clarify why ions move in one direction with alternating-current pixel-driving signals.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133175258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Failure mechanism of TFT devices on flexible substrate by cyclic bending test 柔性基板上TFT器件的循环弯曲失效机理
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785049
K. Hu, S. Cai, L. Lin, X. Gao, X. Huang
{"title":"Failure mechanism of TFT devices on flexible substrate by cyclic bending test","authors":"K. Hu, S. Cai, L. Lin, X. Gao, X. Huang","doi":"10.1109/CAD-TFT.2016.7785049","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785049","url":null,"abstract":"In this paper, the failure mechanism of TFT devices on flexible substrate was investigated using bending test. The results show that the TFT fails due to the micro-cracks in M2 lines; the micro-cracks first generate at the brittle layers and then migrate to the M2 lines.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115454142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High-mobility flexible thin-film transistors with zirconium-doped indium oxide channel layer 掺锆氧化铟沟道层的高迁移率柔性薄膜晶体管
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785055
P. Xiao, L. Lan, D. Luo, J. Peng
{"title":"High-mobility flexible thin-film transistors with zirconium-doped indium oxide channel layer","authors":"P. Xiao, L. Lan, D. Luo, J. Peng","doi":"10.1109/CAD-TFT.2016.7785055","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785055","url":null,"abstract":"A novel ZrInO semiconductor material was investigated as an active channel material for the oxide TFTs. The flexible ZrInO TFT exhibited excellent electrical characteristics with a saturation mobility (μ<sub>sat</sub>) of 22.6 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>, an on/off current ratio (INsub>on</sub>/<sub>Ioff</sub>) of 2.51 × 10<sup>7</sup>, a subthreshold swing (SS) of 0.39 V/decade, a positive ΔV<sub>th</sub> of 1.89 V under PBS and a negative ΔVth of −1.56 V under NBS. In addition, the flexible ZrInO TFT was able to maintain the relatively stable performance at bending curvatures larger than 20 mm.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125798642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carbon nanotube thin-film transistors and driving circuits for flexible display application 柔性显示用碳纳米管薄膜晶体管及驱动电路
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785056
L. Fang, X. Yan, Y. Sun, B. Wang, D. Sun
{"title":"Carbon nanotube thin-film transistors and driving circuits for flexible display application","authors":"L. Fang, X. Yan, Y. Sun, B. Wang, D. Sun","doi":"10.1109/CAD-TFT.2016.7785056","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785056","url":null,"abstract":"Single-walled carbon nanotube is promising for fabricating flexible thin-film transistors due to its excellent carrier mobility, mechanical flexibility, heat tolerance and low-temperature processing. Here, we report a design, fabrication and performance evaluation of a carbon nanotube thin-film transistor with a photoresist layer as the dielectric, and a 16x16 pixels driving circuit for an active matrix organic light emitting diode display. The single pixel unit demonstrated a hole mobility of 65 cm2/V-1<.sup>s-1, an on/off ratio of 104 and an on-current of 8 μA.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128288046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Noise margin analysis for Pseudo-CMOS circuits 伪cmos电路的噪声裕度分析
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785043
Q. Zhao, W. Sun, Y. Liu, H. Yang, J. Zhao, X. Guo
{"title":"Noise margin analysis for Pseudo-CMOS circuits","authors":"Q. Zhao, W. Sun, Y. Liu, H. Yang, J. Zhao, X. Guo","doi":"10.1109/CAD-TFT.2016.7785043","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785043","url":null,"abstract":"Despite the large noise margin merit of pseudo- CMOS logic, its analytical model is absent. In this paper, we derive the static noise margin model for pseudo-CMOS (pseudo- D) logic circuits. Finally, we analyze the impact of design parameters on noise margin. Simulations show the modeling error is about 3%.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"149 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131309319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A fluorescence detector for rapid on-chip detection of amniotic fluid embolism biomarker based on dual-gate photosensitive thin-film transistor 基于双栅光敏薄膜晶体管的羊水栓塞生物标志物快速片上检测荧光检测器
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785054
H. He, Y. Chen, H. Ou, J. Chen, J. Zhou, K. Wang
{"title":"A fluorescence detector for rapid on-chip detection of amniotic fluid embolism biomarker based on dual-gate photosensitive thin-film transistor","authors":"H. He, Y. Chen, H. Ou, J. Chen, J. Zhou, K. Wang","doi":"10.1109/CAD-TFT.2016.7785054","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785054","url":null,"abstract":"In this work, we propose a fluorescence detector based on a dual-gate photosensitive thin-film transistor (DGPTFT) for rapid on-chip detection of zinc coproporphyrin I (ZnCP-I), a biomarker of amniotic fluid embolism (AFE). Working in the subthreshold region, the detector can achieve high sensitivity and low noise. In the preliminary study, the detection limit can be as low as 35 nmol/L.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124361201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improved bias stress stability for low-voltage polymer OTFTs with low-k/high-k bilayer gate dielectric 低k/高k双层栅极电介质低压聚合物OTFTs偏置应力稳定性的改善
2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI: 10.1109/CAD-TFT.2016.7785044
W. Tang, J. Zhao, Y. Huang, L. Ding, S. Chen, X. Guo
{"title":"Improved bias stress stability for low-voltage polymer OTFTs with low-k/high-k bilayer gate dielectric","authors":"W. Tang, J. Zhao, Y. Huang, L. Ding, S. Chen, X. Guo","doi":"10.1109/CAD-TFT.2016.7785044","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2016.7785044","url":null,"abstract":"Low-voltage solution-processed organic thin-film transistors (OTFTs) were developed using a large permittivity (high-k) polymer P(VDF-TrFE-CFE). It was shown that by inserting a thin, low-polar dielectric layer (CYTOP) between the high-k one and the channel, the bias stability was much improved due to screening of the dipole field from high-k dielectric.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131699037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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