High-mobility flexible thin-film transistors with zirconium-doped indium oxide channel layer

Abstract

A novel ZrInO semiconductor material was investigated as an active channel material for the oxide TFTs. The flexible ZrInO TFT exhibited excellent electrical characteristics with a saturation mobility (μ_sat) of 22.6 cm² V^–1 s^–1, an on/off current ratio (INsub>on/_Ioff) of 2.51 × 10⁷, a subthreshold swing (SS) of 0.39 V/decade, a positive ΔV_th of 1.89 V under PBS and a negative ΔVth of −1.56 V under NBS. In addition, the flexible ZrInO TFT was able to maintain the relatively stable performance at bending curvatures larger than 20 mm.