{"title":"Noise margin analysis for Pseudo-CMOS circuits","authors":"Q. Zhao, W. Sun, Y. Liu, H. Yang, J. Zhao, X. Guo","doi":"10.1109/CAD-TFT.2016.7785043","DOIUrl":null,"url":null,"abstract":"Despite the large noise margin merit of pseudo- CMOS logic, its analytical model is absent. In this paper, we derive the static noise margin model for pseudo-CMOS (pseudo- D) logic circuits. Finally, we analyze the impact of design parameters on noise margin. Simulations show the modeling error is about 3%.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"149 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAD-TFT.2016.7785043","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Despite the large noise margin merit of pseudo- CMOS logic, its analytical model is absent. In this paper, we derive the static noise margin model for pseudo-CMOS (pseudo- D) logic circuits. Finally, we analyze the impact of design parameters on noise margin. Simulations show the modeling error is about 3%.