Noise margin analysis for Pseudo-CMOS circuits

Q. Zhao, W. Sun, Y. Liu, H. Yang, J. Zhao, X. Guo
{"title":"Noise margin analysis for Pseudo-CMOS circuits","authors":"Q. Zhao, W. Sun, Y. Liu, H. Yang, J. Zhao, X. Guo","doi":"10.1109/CAD-TFT.2016.7785043","DOIUrl":null,"url":null,"abstract":"Despite the large noise margin merit of pseudo- CMOS logic, its analytical model is absent. In this paper, we derive the static noise margin model for pseudo-CMOS (pseudo- D) logic circuits. Finally, we analyze the impact of design parameters on noise margin. Simulations show the modeling error is about 3%.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"149 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAD-TFT.2016.7785043","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Despite the large noise margin merit of pseudo- CMOS logic, its analytical model is absent. In this paper, we derive the static noise margin model for pseudo-CMOS (pseudo- D) logic circuits. Finally, we analyze the impact of design parameters on noise margin. Simulations show the modeling error is about 3%.
伪cmos电路的噪声裕度分析
尽管伪CMOS逻辑具有噪声裕度大的优点,但缺乏其分析模型。本文推导了伪cmos(伪D)逻辑电路的静态噪声裕度模型。最后,分析了设计参数对噪声裕度的影响。仿真结果表明,模型误差约为3%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信