低k/高k双层栅极电介质低压聚合物OTFTs偏置应力稳定性的改善

2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI:10.1109/CAD-TFT.2016.7785044

W. Tang, J. Zhao, Y. Huang, L. Ding, S. Chen, X. Guo

{"title":"低k/高k双层栅极电介质低压聚合物OTFTs偏置应力稳定性的改善","authors":"W. Tang, J. Zhao, Y. Huang, L. Ding, S. Chen, X. Guo","doi":"10.1109/CAD-TFT.2016.7785044","DOIUrl":null,"url":null,"abstract":"Low-voltage solution-processed organic thin-film transistors (OTFTs) were developed using a large permittivity (high-k) polymer P(VDF-TrFE-CFE). It was shown that by inserting a thin, low-polar dielectric layer (CYTOP) between the high-k one and the channel, the bias stability was much improved due to screening of the dipole field from high-k dielectric.","PeriodicalId":303429,"journal":{"name":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved bias stress stability for low-voltage polymer OTFTs with low-k/high-k bilayer gate dielectric\",\"authors\":\"W. Tang, J. Zhao, Y. Huang, L. Ding, S. Chen, X. Guo\",\"doi\":\"10.1109/CAD-TFT.2016.7785044\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low-voltage solution-processed organic thin-film transistors (OTFTs) were developed using a large permittivity (high-k) polymer P(VDF-TrFE-CFE). It was shown that by inserting a thin, low-polar dielectric layer (CYTOP) between the high-k one and the channel, the bias stability was much improved due to screening of the dipole field from high-k dielectric.\",\"PeriodicalId\":303429,\"journal\":{\"name\":\"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAD-TFT.2016.7785044\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAD-TFT.2016.7785044","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用大介电常数(高k)聚合物P(VDF-TrFE-CFE)开发了低压溶液加工有机薄膜晶体管(OTFTs)。结果表明，通过在高k介电层和通道之间插入薄的低极性介电层(CYTOP)，由于屏蔽了高k介电的偶极子场，使得偏置稳定性大大提高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Improved bias stress stability for low-voltage polymer OTFTs with low-k/high-k bilayer gate dielectric

Low-voltage solution-processed organic thin-film transistors (OTFTs) were developed using a large permittivity (high-k) polymer P(VDF-TrFE-CFE). It was shown that by inserting a thin, low-polar dielectric layer (CYTOP) between the high-k one and the channel, the bias stability was much improved due to screening of the dipole field from high-k dielectric.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)

自引率

0.00%

发文量