基于考虑退化状态的对称正交法的AOS tft物理建模

2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI:10.1109/CAD-TFT.2016.7785042

J. Fang, W. Deng, X. Ma, W. Wu, J. Huang

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引用次数: 0

摘要

给出了非晶氧化物半导体表面电位和表面电流的解析解。通过在不同情况下将Lambet函数重新表述为两个不同的指数项，我们避免了退化引起的许多复杂性。这里采用对称正交法。该模型与实验数据吻合较好，适合于电路仿真。

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Physical modeling of AOS TFTs based on symmetric quadrature method considering degenerate regime

Explicit analytical solutions to the surface potential and current of amorphous oxide semiconductors TFTs are presented. By reformulating Lambet function as two different exponential terms in different cases, we avoid much of the complexity that degeneration induces. Symmetric quadrature method is adopted here. The model shows a good agreement with the experimental data and is suitable for circuit simulations.

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2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)

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