tft的人工神经网络压缩模型

2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT) Pub Date : 2016-10-01 DOI:10.1109/CAD-TFT.2016.7785057

Q. Chen, G. Chen

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引用次数: 10

摘要

本文报道了一种基于人工神经网络的TFT紧凑建模方法。漏极电流和栅极电容的建模精度都很高。还测试了不同W/L比的可扩展性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Artificial neural network compact model for TFTs

This paper reports a TFT compact modeling methodology based on artificial neural networks (ANNs). Both drain current and gate capacitance are modeled with good accuracy. Extendability to different W/L ratios is also tested.

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来源期刊

2016 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT)

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