Physical modeling of AOS TFTs based on symmetric quadrature method considering degenerate regime

Abstract

Explicit analytical solutions to the surface potential and current of amorphous oxide semiconductors TFTs are presented. By reformulating Lambet function as two different exponential terms in different cases, we avoid much of the complexity that degeneration induces. Symmetric quadrature method is adopted here. The model shows a good agreement with the experimental data and is suitable for circuit simulations.