发布求助
文献互助 智能选刊 最新文献

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)最新文献

筛选
英文 中文
Cascode monolithic switches in resonant circuit applications 级联码单片开关在谐振电路中的应用
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869866
G. Belverde, Agostino Galluuo, M. Melito, S. Musumeci, Stmicroelectronics, Stradale Primosole
{"title":"Cascode monolithic switches in resonant circuit applications","authors":"G. Belverde, Agostino Galluuo, M. Melito, S. Musumeci, Stmicroelectronics, Stradale Primosole","doi":"10.1109/ICCDCS.2000.869866","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869866","url":null,"abstract":"Applications of new high-voltage bipolar-power MOSFET cascode monolithic devices are developed. The device features of this smart-power emitter-switching component are described both in terms of physical structure and electrical performance. Firstly, the device is characterized in a soft-switching zero-voltage (ZV) test circuit. Experimental tests are carried out under several working conditions in order to understand the main advantages and drawbacks of the switch. Finally, actual ZV applications, such as a step-down ZV quasi-resonant converter (QRC) and a TV deflection circuit, are presented and discussed.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125146606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs 传统和分级沟道全耗尽绝缘体上硅nmosfet的浮体效应比较
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869840
M. Pavanello, J. Martino, D. Flandre
{"title":"Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs","authors":"M. Pavanello, J. Martino, D. Flandre","doi":"10.1109/ICCDCS.2000.869840","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869840","url":null,"abstract":"In this work the parasitic bipolar effects are studied and compared in conventional and graded-channel fully-depleted SOI nMOSFETs by means of both two-dimensional simulation and experiments. The multiplication factor and parasitic bipolar gain, which are the parameters responsible for the parasitic BJT action, are investigated separately. Breakdown voltage, abnormal subthreshold slope and hysteresis are also investigated. The graded-channel device efficiently alleviates the parasitic BST activation, improving the breakdown voltage.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116545567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Scaling of vertical and lateral MOSFETs in the deep submicrometer range 垂直和横向mosfet在深亚微米范围内的缩放
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869843
M. Kittler, F. Schwierz, D. Schipanski
{"title":"Scaling of vertical and lateral MOSFETs in the deep submicrometer range","authors":"M. Kittler, F. Schwierz, D. Schipanski","doi":"10.1109/ICCDCS.2000.869843","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869843","url":null,"abstract":"Conventional lateral and vertical n-channel MOS transistors with channel length in the range of 350 nm to 40 nm have been systematically investigated by means of device simulation. In principle, vertical MOSFETs with different layer designs show a similar DC behaviour to conventional lateral devices. The vertical planar doped barrier MOSFET (PDBFET) exhibits the highest transconductance already for longer channel length. On the other hand, caused by the large gate contact overlap to source/drain layers, the different vertical transistor versions show only low values of the cutoff frequency compared to lateral devices. The reduction of this overlap and an increase of the oxide thickness between the gate contact and the substrate material can considerably improve the small signal behaviour of vertical MOS transistors. For example, for optimized vertical homogeneously doped transistors with 130 nm channel length cut off frequencies of over 65 GHz have been predicted at V/sub ds/=2.0 V.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121177008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Bounded delay performance analysis for distributed multimedia applications under shared virtual environment 共享虚拟环境下分布式多媒体应用的有界延迟性能分析
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869876
O. Wongwirat, S. Makhanov, S. Ohara
{"title":"Bounded delay performance analysis for distributed multimedia applications under shared virtual environment","authors":"O. Wongwirat, S. Makhanov, S. Ohara","doi":"10.1109/ICCDCS.2000.869876","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869876","url":null,"abstract":"Distributed multimedia applications can be characterized into two types of interaction, nonconversation and conversation, where discrete media and continuous media data are involved respectively. The two application types have distinct requirements in terms of delay to support interactive services, particularly under shared virtual environment. Conversational interactive type application continuous media is mainly focused, a limited delay is required for achieving real-time service guarantees and for maintaining temporal relationship, or synchronization. In this paper, we apply the internet delay model to the conversational type application for distributed multimedia data under shared virtual environment on the internet to analyze the performance of the bounded delay value. The simulation results show the delay variation of continuous multimedia data apparently at the clients and a server under dynamic case consideration which represents the delay characteristic of the application on the internet.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128632025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High-voltage solar cells, combining both vertical p-n junctions in the graded band-gap layer and horizontal p-n junctions in the base layer 高压太阳能电池，结合了梯度带隙层中的垂直pn结和基础层中的水平pn结
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869849
E. Hrayshat
{"title":"High-voltage solar cells, combining both vertical p-n junctions in the graded band-gap layer and horizontal p-n junctions in the base layer","authors":"E. Hrayshat","doi":"10.1109/ICCDCS.2000.869849","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869849","url":null,"abstract":"Two structures of high-voltage solar cells are discussed and analyzed. The first one is a high-voltage solar cell with only vertical p-n junctions. Therefore, the photocurrent value of this structure and-consequently-the efficiency are low because of the small active p-n junction area. In order to improve the main parameters of this structure-particularly the photocurrent and the efficiency-a new structure of high-voltage solar cells, combining both horizontal and vertical p-n junctions is suggested. This structure has been elaborated by combining liquid phase epitaxy with gas-phase zinc diffusion technologies, and was grown on semi-insulating GaAs substrates with /spl rho/=10/sup 12/ /spl Omega//spl middot/cm. This new structure has shown better parameters than the parameters of the high-voltage solar cell with only vertical p-n junctions. It exhibits appreciable values of photocurrent and output voltage. Furthermore, this structure provides both high short wavelength sensitivity, and independent efficiencies of spectral composition of solar radiation. Therefore, it can be successfully utilized in many aspects of modern science and technology, particularly as power supplies in high-located areas, and as photoacceptors for ultraviolet radiation.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"53 78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124660087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 900 MHz/1800 MHz/1900 MHz superhet receiver engaging high IF1 for image rejection 一个900 MHz/1800 MHz/1900 MHz的超级接收器，具有高IF1用于图像抑制
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869874
A. Pneumatikakis, L. Dermentzoglou, A. Arapoyanni, I. Mosiadis
{"title":"A 900 MHz/1800 MHz/1900 MHz superhet receiver engaging high IF1 for image rejection","authors":"A. Pneumatikakis, L. Dermentzoglou, A. Arapoyanni, I. Mosiadis","doi":"10.1109/ICCDCS.2000.869874","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869874","url":null,"abstract":"A superheterodyne receiver intended for TDMA multi-standard operation is presented. The receiver achieves image rejection, by employing a very high first intermediate frequency, common for the three standards involved. The second IF stage positions the signal at a lower frequency, suitable for analog channel selection and bandpass sub-sampling, making the conversion to baseband a trivial digital task, The main objective is the determination of the feasibility of the architecture by extracting the building block parameters in order to operate for all the GSM-like standards.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126406026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Measurement of junction temperature in heterojunction bipolar transistors 异质结双极晶体管结温的测量
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869844
Yang-Hua Chang, Ying-Yih Wu
{"title":"Measurement of junction temperature in heterojunction bipolar transistors","authors":"Yang-Hua Chang, Ying-Yih Wu","doi":"10.1109/ICCDCS.2000.869844","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869844","url":null,"abstract":"A technique to calculate junction temperature of heterojunction bipolar transistors is presented. By measurement of collector current as a function of V/sub BE/ at only a few substrate temperatures, the junction temperature at different biases can be derived. Results are shown from a multi-finger AlGaAs/GaAs transistor and a single-finger InGaP/GaAs transistor.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121798208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Role of N/sub 2/ ion implantation dose on hot carrier lifetime in deep submicron NMOS devices N/亚离子注入剂量对深亚微米NMOS器件热载流子寿命的影响
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869837
F. Guarín, S. Rauch, G. La Rosa, K. Brelsford
{"title":"Role of N/sub 2/ ion implantation dose on hot carrier lifetime in deep submicron NMOS devices","authors":"F. Guarín, S. Rauch, G. La Rosa, K. Brelsford","doi":"10.1109/ICCDCS.2000.869837","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869837","url":null,"abstract":"The impact of N/sub 2/ ion implantation (I/I) dose before gate oxide growth on Hot Carrier (HC) reliability of NMOSFETs is reported here. Improvements ranging from 20 to 30 times in HC lifetime were achieved by the introduction of sufficiently high N/sub 2/ (I/I) doses. It was found that for NMOSFET's the HC degradation correlates inversely to the initial interface state density introduced by the N/sub 2/ I/I process. We believe that the increased initial interface state density and the reduced hot carrier degradation both stem from the reduced hydrogen concentration at the Si-SiO/sub 2/ interface with increasing N/sub 2/ dose.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121585075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterisation of radiation effects on MOSFET using genetic algorithms 利用遗传算法表征辐射对MOSFET的影响
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869842
R. Picos, M. Roca, O. Calvo, E. García-Moreno
{"title":"Characterisation of radiation effects on MOSFET using genetic algorithms","authors":"R. Picos, M. Roca, O. Calvo, E. García-Moreno","doi":"10.1109/ICCDCS.2000.869842","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869842","url":null,"abstract":"In this work we propose an application of genetic algorithms to the extraction of model parameters for submicronic MOSFET devices. This application seems to be an effective way to fit transistor models to real measurements. The method is used to characterise the radiation effects on transistors using a UCCM-based model. Results of the fitting process and of the parameter accuracy obtained are given.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114277797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Realization of a versatile 8-VSB exciter in a single CPLD for multi-purpose digital television applications 多用途数字电视用CPLD实现多功能8-VSB励磁器
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI: 10.1109/ICCDCS.2000.869888
A. El-Bardawil
{"title":"Realization of a versatile 8-VSB exciter in a single CPLD for multi-purpose digital television applications","authors":"A. El-Bardawil","doi":"10.1109/ICCDCS.2000.869888","DOIUrl":"https://doi.org/10.1109/ICCDCS.2000.869888","url":null,"abstract":"In this paper the realization of a complete 8-VSB-exciter in a single CPLD is described. The implementation consists of the complete FEC-encoder as well as the signal processing part, i.e., carrier insertion, VSB-filtering and IQ-modulation. The advantages of this realization and possible applications are shown.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122163828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信