Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs

Abstract

In this work the parasitic bipolar effects are studied and compared in conventional and graded-channel fully-depleted SOI nMOSFETs by means of both two-dimensional simulation and experiments. The multiplication factor and parasitic bipolar gain, which are the parameters responsible for the parasitic BJT action, are investigated separately. Breakdown voltage, abnormal subthreshold slope and hysteresis are also investigated. The graded-channel device efficiently alleviates the parasitic BST activation, improving the breakdown voltage.