传统和分级沟道全耗尽绝缘体上硅nmosfet的浮体效应比较

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI:10.1109/ICCDCS.2000.869840

M. Pavanello, J. Martino, D. Flandre

{"title":"传统和分级沟道全耗尽绝缘体上硅nmosfet的浮体效应比较","authors":"M. Pavanello, J. Martino, D. Flandre","doi":"10.1109/ICCDCS.2000.869840","DOIUrl":null,"url":null,"abstract":"In this work the parasitic bipolar effects are studied and compared in conventional and graded-channel fully-depleted SOI nMOSFETs by means of both two-dimensional simulation and experiments. The multiplication factor and parasitic bipolar gain, which are the parameters responsible for the parasitic BJT action, are investigated separately. Breakdown voltage, abnormal subthreshold slope and hysteresis are also investigated. The graded-channel device efficiently alleviates the parasitic BST activation, improving the breakdown voltage.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs\",\"authors\":\"M. Pavanello, J. Martino, D. Flandre\",\"doi\":\"10.1109/ICCDCS.2000.869840\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work the parasitic bipolar effects are studied and compared in conventional and graded-channel fully-depleted SOI nMOSFETs by means of both two-dimensional simulation and experiments. The multiplication factor and parasitic bipolar gain, which are the parameters responsible for the parasitic BJT action, are investigated separately. Breakdown voltage, abnormal subthreshold slope and hysteresis are also investigated. The graded-channel device efficiently alleviates the parasitic BST activation, improving the breakdown voltage.\",\"PeriodicalId\":301003,\"journal\":{\"name\":\"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2000.869840\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2000.869840","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文采用二维仿真和实验两种方法，对传统和梯度沟道全耗尽SOI nmosfet中的寄生双极效应进行了研究和比较。分别研究了影响寄生BJT作用的倍增因子和寄生双极增益。对击穿电压、异常亚阈值斜率和迟滞进行了研究。梯度通道器件有效地减轻了寄生BST激活，提高了击穿电压。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs

In this work the parasitic bipolar effects are studied and compared in conventional and graded-channel fully-depleted SOI nMOSFETs by means of both two-dimensional simulation and experiments. The multiplication factor and parasitic bipolar gain, which are the parameters responsible for the parasitic BJT action, are investigated separately. Breakdown voltage, abnormal subthreshold slope and hysteresis are also investigated. The graded-channel device efficiently alleviates the parasitic BST activation, improving the breakdown voltage.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)

自引率

0.00%

发文量