N/亚离子注入剂量对深亚微米NMOS器件热载流子寿命的影响

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI:10.1109/ICCDCS.2000.869837

F. Guarín, S. Rauch, G. La Rosa, K. Brelsford

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引用次数: 0

摘要

本文报道了栅极氧化物生长前N/亚2/离子注入(I/I)剂量对nmosfet热载流子可靠性的影响。通过引入足够高的N/ sub2 / (I/I)剂量，HC寿命可延长20至30倍。结果表明，NMOSFET的HC退化与N/sub 2/ I/I工艺引入的初始界面态密度成反比。我们认为，随着N/sub /剂量的增加，Si-SiO/sub /界面上的氢浓度降低，从而增加了初始界面态密度和减少了热载子降解。

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Role of N/sub 2/ ion implantation dose on hot carrier lifetime in deep submicron NMOS devices

The impact of N/sub 2/ ion implantation (I/I) dose before gate oxide growth on Hot Carrier (HC) reliability of NMOSFETs is reported here. Improvements ranging from 20 to 30 times in HC lifetime were achieved by the introduction of sufficiently high N/sub 2/ (I/I) doses. It was found that for NMOSFET's the HC degradation correlates inversely to the initial interface state density introduced by the N/sub 2/ I/I process. We believe that the increased initial interface state density and the reduced hot carrier degradation both stem from the reduced hydrogen concentration at the Si-SiO/sub 2/ interface with increasing N/sub 2/ dose.

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Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)

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