利用遗传算法表征辐射对MOSFET的影响

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI:10.1109/ICCDCS.2000.869842

R. Picos, M. Roca, O. Calvo, E. García-Moreno

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引用次数: 1

摘要

在这项工作中，我们提出了一种应用遗传算法来提取亚微米MOSFET器件的模型参数。这种应用似乎是一种有效的方法来拟合晶体管模型的实际测量。该方法利用基于uccm的模型来表征辐射对晶体管的影响。给出了拟合过程的结果和得到的参数精度。

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Characterisation of radiation effects on MOSFET using genetic algorithms

In this work we propose an application of genetic algorithms to the extraction of model parameters for submicronic MOSFET devices. This application seems to be an effective way to fit transistor models to real measurements. The method is used to characterise the radiation effects on transistors using a UCCM-based model. Results of the fitting process and of the parameter accuracy obtained are given.

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Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)

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