异质结双极晶体管结温的测量

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI:10.1109/ICCDCS.2000.869844

Yang-Hua Chang, Ying-Yih Wu

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引用次数: 2

摘要

提出了一种计算异质结双极晶体管结温的方法。通过在几个衬底温度下测量集电极电流作为V/sub BE/的函数，可以推导出不同偏置下的结温。结果显示了多指AlGaAs/GaAs晶体管和单指InGaP/GaAs晶体管。

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Measurement of junction temperature in heterojunction bipolar transistors

A technique to calculate junction temperature of heterojunction bipolar transistors is presented. By measurement of collector current as a function of V/sub BE/ at only a few substrate temperatures, the junction temperature at different biases can be derived. Results are shown from a multi-finger AlGaAs/GaAs transistor and a single-finger InGaP/GaAs transistor.

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Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)

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