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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)最新文献

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Microsystem for electrochemiluminescence-based analysis 基于电化学发光分析的微系统
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791609
P. Michel, G. Fiaccabrino, N. D. de Rooij, M. Koudelka-Hep
{"title":"Microsystem for electrochemiluminescence-based analysis","authors":"P. Michel, G. Fiaccabrino, N. D. de Rooij, M. Koudelka-Hep","doi":"10.1109/COMMAD.1998.791609","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791609","url":null,"abstract":"A stand-alone microsystem, consisting of an electrochemical transducer, photodetector and a flow-through cell was realized and characterized for the electrochemiluminescence (ECL) measurements of a luminol/peroxide system and a ruthenium bipyridyl complex. The luminol/peroxide system was then associated with glucose oxidase for the detection of glucose.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128841224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a /spl delta/-doped wide-gap collector 一种新型InGaP/GaAs双异质结双极晶体管(DHBT)，具有/spl δ /掺杂宽间隙集电极
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791631
W. Liu, W.C. Wang, W. Chang, K. Yu, S. Feng, J. Yan
{"title":"A new InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a /spl delta/-doped wide-gap collector","authors":"W. Liu, W.C. Wang, W. Chang, K. Yu, S. Feng, J. Yan","doi":"10.1109/COMMAD.1998.791631","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791631","url":null,"abstract":"A In/sub 0.5/Ga/sub 0.5/P-GaAs double heterojunction bipolar transistor (DHBT) with a /spl delta/-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at the emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123273808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Poisson's ratio of GaAs
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791644
B. Usher, D. Zhou, S. Goh, T. Warmiński, X. Huang
{"title":"Poisson's ratio of GaAs","authors":"B. Usher, D. Zhou, S. Goh, T. Warmiński, X. Huang","doi":"10.1109/COMMAD.1998.791644","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791644","url":null,"abstract":"Most epitaxial layer growth involves mismatch between layer and growth substrate, even in the case of nearly lattice matched systems such as GaAs/AlAs. The accurate determination of layer thicknesses and stoichiometry in single and multi-layer heterostructures by x-ray diffraction requires knowledge of the elastic properties of the layers so that accurate account can be taken of strain effects. A novel technique has been developed which allows Poisson's ratio to be determined by measuring a semiconductor sample in both the pseudomorphic and completely relaxed states. The relationship between the two strain states determines the material's Poisson ratio and this has been found to be 0.320/spl plusmn/0.001 for GaAs.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126832155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Fabrication of depletion- and enhancement-mode GaInP/GaAs /spl delta/-HEMT's 耗尽型和增强型GaInP/GaAs /spl δ /- hemt的制备
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791624
Min-Yuan Wu, W. Lour, Ge Huang, Y. Shih
{"title":"Fabrication of depletion- and enhancement-mode GaInP/GaAs /spl delta/-HEMT's","authors":"Min-Yuan Wu, W. Lour, Ge Huang, Y. Shih","doi":"10.1109/COMMAD.1998.791624","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791624","url":null,"abstract":"A new HEMT structure was proposed to fabricate both types .f device. Additional n-GaAs cap layer was employed to control the device operation mode. Accordingly, both depletion- and enhancement- mode HEMT's were simultaneously fabricated on the same chip by selectivelv removing the cap layer. For a 1x100 pm2 device, the pinch-c$f voltage for the depletion mode device is -1.8 K The maximum applied gate voltage for the enhancement mode one is +I.8 K The measured output current and transconductance are 260 (200) mA/mm, 175 (150) mS/mm. The measured f t und f ma are 6.3 (6) and 13 (12) GHz for depletion- and enhancement-mode devices, respectively.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115294165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Dye molecule/viologen system for a novel photoelectrochromism 一种新型光电致变色染料分子/紫素体系
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791686
Yongxiang Li, J. Hagen, D. Haarer
{"title":"Dye molecule/viologen system for a novel photoelectrochromism","authors":"Yongxiang Li, J. Hagen, D. Haarer","doi":"10.1109/COMMAD.1998.791686","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791686","url":null,"abstract":"Ruthenium (II) tri-(bipyridyl) dye molecules (Ru(II)(bipy)/spl middot/2Cl/sub 2/) were used as a sensitiser which absorbs the visible light in the region of 360-500 nm. The photoexcited sensitiser can transfer charge carriers to an electron acceptor (benzyl-viologen) and lead to redox reactions. Along with these redox reactions the solution changes its color, while LiI or triethylamine (TEA) are added in the solution as electron delays. The coloring and bleaching processes of a test cell filled with the solution were examined exposing to different light intensities.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121736004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Gallium nitride based electronics and opto-electronics 氮化镓电子学和光电子学
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791588
U. Mishra, S. Denbaars
{"title":"Gallium nitride based electronics and opto-electronics","authors":"U. Mishra, S. Denbaars","doi":"10.1109/COMMAD.1998.791588","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791588","url":null,"abstract":"The benefit provided by optoelectronic applications of gallium nitride is immeasurable and, contrary to electronics applications, it provides an unique solution not merely a better one. This is because of the wide range of tunable and direct band gaps available in the (Al,Ga,In)N family from the deep UV (AlN; 6.2 eV) to values commensurate with metals when including the mixed arsenide nitride system. The impact of InGaN/GaN based LEDs for blue and green emitters has already been enormous (over a $250 million market in 1998) and the promise of nitride based lasers DVD applications is phenomenal. Within this context, in this paper, recent progress in microwave AlGaN/GaN HEMTs and AlGaN/InGaN blue lasers at UCSB on sapphire is presented.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123869458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Tuning of detection wavelength of GaAs/AlGaAs quantum-well IR photo-detectors by thermal interdiffusion 热互扩散对GaAs/AlGaAs量子阱红外探测器探测波长的调谐
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791600
Xingquan Liu, Ning Li, Xiaoshuang Chen, Wei Lu, Wen-lan Xu, Xianzhang Yuan, Nanxi Li, S. Shen, S. Yuan, H. Tan, C. Jagadish
{"title":"Tuning of detection wavelength of GaAs/AlGaAs quantum-well IR photo-detectors by thermal interdiffusion","authors":"Xingquan Liu, Ning Li, Xiaoshuang Chen, Wei Lu, Wen-lan Xu, Xianzhang Yuan, Nanxi Li, S. Shen, S. Yuan, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.1998.791600","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791600","url":null,"abstract":"Thermal interdiffusion is used to shift peak response wavelength of the quantum well infrared photodetectors (QWIP). A maximum of 0.7 /spl mu/m red-shift for 900/spl deg/C annealed devices compared with as-grown one has been obtained. Error function potential profile is used to calculate the intermixing process. The large red shift is attributed to Si-dopant enhanced intermixing. Both the dark current and responsivity of QWIP are decreased for 900/spl deg/C annealed sample than as-grown one, which is attributed to decrease of electron concentration in the quantum well due to Si-dopant outdiffusion.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"312 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131473556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modelling AlGaN heterojunction solar-blind photodetectors 模拟AlGaN异质结太阳盲光电探测器
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791675
J. J. Kuek, M. Wong, T. A. Fisher, B. Nener
{"title":"Modelling AlGaN heterojunction solar-blind photodetectors","authors":"J. J. Kuek, M. Wong, T. A. Fisher, B. Nener","doi":"10.1109/COMMAD.1998.791675","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791675","url":null,"abstract":"There is considerable interest in the detection of UV radiation in the Hartley Ozone band (200-300 nm). Solar radiation in this range of wavelengths is strongly absorbed by stratospheric ozone producing a \"black\" background at the Earth's surface. Consequently, terrestrial UV sources such as fires, furnaces and missile plumes can be detected with a large signal-to-background ratio and, therefore, a low probability of false alarm, Photodetectors operating in these wavelengths are known as solar-blind detectors. The AlGaN material system has a direct bandgap that can be tailored to this range of UV wavelengths by varying the proportion of the Al and Ga in the alloy, Recent work on the analytical modelling of UV photodetectors in the AlGaN material system has suggested designs for p-i-n diodes that should prove of use in solar-blind-detection applications. In this conference paper, we extend our earlier modelling work by utilizing the numerical device simulator, MEDICI, in conjunction with an AlGaN material library that has been developed at UWA. This powerful combination is used here to investigate the effect of band offsets on the responsivity of heterojunction p-i-n photodetectors operating in the 200-400 nm regime.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116505639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
UV-LIGA: a promising and low-cost variant for microsystem technology UV-LIGA:一种有前途的低成本微系统技术变体
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791668
W. Qu, C. Wenzel, A. Jahn, D. Zeidler
{"title":"UV-LIGA: a promising and low-cost variant for microsystem technology","authors":"W. Qu, C. Wenzel, A. Jahn, D. Zeidler","doi":"10.1109/COMMAD.1998.791668","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791668","url":null,"abstract":"A low-cost surface microstructuring technique is described and examples provided of its recent application. The new technology, UV-LIGA combines depth UV lithographic patterning of very thick photoresists and electrodepositing of structural materials into the patterned resist moulds. Both UV lithography and electrodeposition do not need any expensive or special equipment. Movable three dimensional microstructures with a high aspect ratio can be obtained by combining the UV-LIGA process with a sacrificial layer technique. As an example of the advanced application in microsystems, fabrication of 3D accelerometers has been presented, using titanium as a sacrificial layer and nickel as the structural material.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"149 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127575624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
New process for self-aligned T-gate heterostructure field-effect transistors with reduced gate length 自对准t栅极异质结构场效应晶体管的新工艺
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791625
H.R. Chen, Y. Shih, W. S. Lour, M. Wu
{"title":"New process for self-aligned T-gate heterostructure field-effect transistors with reduced gate length","authors":"H.R. Chen, Y. Shih, W. S. Lour, M. Wu","doi":"10.1109/COMMAD.1998.791625","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791625","url":null,"abstract":"This paper reports on self-aligned T-gate InGaP/GaAs FETs using n/sup +//N/sup +///spl delta/(P/sup +/)/n structures. The N/sup +/-InGaP//spl delta/(P/sup +/)-InGaP/n-GaAs structure forms a planar-doped barrier. An over-etch n/sup +/-GaAs/N/sup +/-InGaP layer offers the implement of self-aligned T-gate by an highly selective etch between the InGaP and a GaAs layers. A fabricated device with an effective gate length of 1.5/spl times/100 (0.6/spl times/100) /spl mu/m/sup 2/ exhibits an extrinsic transconductance, unity-current gain frequency, and unity-power gain frequency of 78 (80) mS/mm, 9 (19.5), and 28 (30) GHz, respectively. Moreover, all proposed devices show good dc and ac linearity.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133220147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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