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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)最新文献

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Thick-film gas and humidity sensing array based on semiconducting metal oxides 基于半导体金属氧化物的厚膜气体和湿度传感阵列
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791669
W. Qu, A. Haeusler, J.-U. Meyer, W. Wlodarski
{"title":"Thick-film gas and humidity sensing array based on semiconducting metal oxides","authors":"W. Qu, A. Haeusler, J.-U. Meyer, W. Wlodarski","doi":"10.1109/COMMAD.1998.791669","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791669","url":null,"abstract":"There is considerable interest in the use of sensor array devices (SADs) in instruments both to analyse gas mixtures and to recognise complex odours from foodstuffs and beverages. This paper describes the results of studies on material processing, fabrication and characterisation of a new low-cost, solid state IC 24-pin gas and humidity sensing array based on thick-film technology. The array consists of eight sensing elements on a common substrate and can be used for monitoring the air quality in the gas pipes of civil buildings. A new processing method characterised by using alkali-ions instead of traditional glass frits as adhesion promoter, is applied in mixing the sensor pastes. The sintered sensing layers exhibit a desirable porous structure. The sensors in the array possesses a unique electrode configuration and hence, have a high sensitivity and a fast response. The multiple output signal of the array can be directly used for alarm systems or as input signals for fuzzy logic algorithms for enhancing selectivity of SnO/sub 2/ sensors.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114294094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions MeV离子注入n型和p型Si后亚阈值损伤的电学和结构特征比较研究
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791701
S. Fatima, J. Wong-Leung, J. Fitzgerald, C. Jagadish
{"title":"Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions","authors":"S. Fatima, J. Wong-Leung, J. Fitzgerald, C. Jagadish","doi":"10.1109/COMMAD.1998.791701","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791701","url":null,"abstract":"Sub-threshold damage in n and p-type Si implanted and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). Irrespective of the ion mass, DLTS spectra show a transition or critical dose below which point defects in p-type Si and no electrically active defects in n-type Si are transformed in to extended defect signatures above this dose. DLTS observation correlates well with the TEM analysis; for the doses above critical dose extended defects are observed. Furthermore, mass of the implanted ion has been found effecting the type of extended defects even though the doses were adjusted to create a similar damage distribution for all the implanted ions.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125136888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A comparative study of photoenhanced wet chemical etching and reactive ion etching of GaN epilayers grown on various substrates 不同衬底上生长的GaN薄膜的光增强湿化学蚀刻与反应离子蚀刻的比较研究
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791618
B. M. Kinder, T. Tansley
{"title":"A comparative study of photoenhanced wet chemical etching and reactive ion etching of GaN epilayers grown on various substrates","authors":"B. M. Kinder, T. Tansley","doi":"10.1109/COMMAD.1998.791618","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791618","url":null,"abstract":"We have explored wet and dry etching of GaN epilayers using photoenhanced wet etching and reactive ion etching. Samples investigated were commercially grown by hydride vapour phase epitaxy (HVPE) on SiC and sapphire substrates. Aqueous KOH was used for an electrolyte and UV illumination from a xenon lamp for photoenhanced wet etching. For reactive ion etching, we used a gas mixture of CCl/sub 2/F/sub 2/ and argon. Typical etch rates measured were 40 nm/min and 20 nm/min for wet and dry etching respectively. We found that post wet-etched surfaces were very rough compared with dry etched surfaces. Both techniques were found to reveal the defects in the epilayers and reactive ion etching revealed etch pits in the GaN/Al/sub 2/O/sub 3/ samples. Etch pit density was found to increase slightly as etch time progressed and after 30 minutes, the density was 1/spl times/10/sup 8//cm/sup 2/. After 90 minutes etching, the substrate was revealed and no etch pits were observed.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"464 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116187336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
WO/sub 3/ thin films prepared by the sol-gel process for ozone sensing 溶胶-凝胶法制备臭氧传感用WO/ sub3 /薄膜
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791648
Y. Li, M. Atashbar, M. Ghantasala, W. Wlodarski, C. Cantalini, S. Santucci, G. Sberveglieri
{"title":"WO/sub 3/ thin films prepared by the sol-gel process for ozone sensing","authors":"Y. Li, M. Atashbar, M. Ghantasala, W. Wlodarski, C. Cantalini, S. Santucci, G. Sberveglieri","doi":"10.1109/COMMAD.1998.791648","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791648","url":null,"abstract":"t Abstract- Tungsten trioxide (WO3 thin films have been prepared by sol-gel process and their ozone sensing properties. The morphology, microstructure, crystalline structure and chemical composition of the thin films have been analysed using SEM, XRD and RBS techniques. SEM analysis showed that WO, thin films annealed at 500°C are smooth and uniform with a grain size of 20-50 nm, above which microcracking observed in the films. The WO, films annealed up to 400°C are amorphous, while annealing at 500°C and above, resulted in the formation of monoclinic WO, polycrystalline structure with (200) preferential orientation. RBS results have revealed that the films annealed at 400°C are stoichiometric, above which the films turned to off-stoichiometric. The electrical resistance of the thin films annealed at 500°C increased 18 times when it exposed to 175 ppb 0, compared to the air exposure with a response time of 1-2 min. The details of the structural and microstructural analysis of the films and their effects on the sensing properties are discussed. applications. In this paper, we report the details of the structural and microstructural characterisation of the WO, thin films derived from sol-gel process and their 0, gas sensing properties. 11. EXPERIMENTAL 1. Sample Preparation","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128388396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancement of optical bandwidth using high barrier multiquantum well structures 利用高势垒多量子阱结构增强光带宽
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791699
M.G. Xu, T. Fisher, J. Dell
{"title":"Enhancement of optical bandwidth using high barrier multiquantum well structures","authors":"M.G. Xu, T. Fisher, J. Dell","doi":"10.1109/COMMAD.1998.791699","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791699","url":null,"abstract":"We demonstrate the enhancement of optical bandwidth for modulators based on the quantum confined Stark effect using high barrier multiquantum well structures. This is achieved by carefully placing the Fabry-Perot mode in the wavelength region where the absorbing layer exhibits anomalous refractive index dispersion in the vicinity of the exciton peaks. The enhancement in both the exciton oscillator strength and the separation between the heavy hole and light hole in high barrier multiquantum well structures ultimately results in the enhancement of optical bandwidth. A simulation example shows an increase of 2.5 nm in optical bandwidth at the cost of a factor of three increase in electric field to obtain the same contrast ratio characteristics as a modulator fabricated with low barrier material.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126280324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum noise in coherently coupled double well systems 相干耦合双阱系统中的量子噪声
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791645
H. Sun, G. Milburn
{"title":"Quantum noise in coherently coupled double well systems","authors":"H. Sun, G. Milburn","doi":"10.1109/COMMAD.1998.791645","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791645","url":null,"abstract":"Intrinsic quantum fluctuations play an important role in a low temperature, high mobility regime. Coherently coupled nano-structures are likely to become increasingly important. We propose a new approach to quantum noise in resonant tunnelling systems with coherent coupling between the bound states of adjacent wells. The results go beyond the traditional population master equation approach and show new features caused by the coherent coupling.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126430243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cooperatively frequency-locked multimode operation in proton implanted VCSELs 质子注入VCSELs的协同锁频多模操作
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791597
A. Rakić, V. Boros, M. Majewski, M.I. Cohen
{"title":"Cooperatively frequency-locked multimode operation in proton implanted VCSELs","authors":"A. Rakić, V. Boros, M. Majewski, M.I. Cohen","doi":"10.1109/COMMAD.1998.791597","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791597","url":null,"abstract":"It is known that birefringence and astigmatism are responsible for lifting the frequency and polarization degeneracy of transverse modes in Vertical-Cavity Surface-Emitting Lasers (VCSELs). We report on observation of \"cooperative frequency locking\" of nearly degenerate TEM/sub 01/ and TEM/sub 10/ modes of a VCSEL. For a certain range of injection currents two modes become cooperatively frequency locked in phase quadrature to form a steady-state TEM*/sub 01/ hybrid mode (doughnut). This mode exhibits a helical wavefront structure with the phase singularity on the axis, thus degrading the beam quality.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132773188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode 非晶SiC:H/非晶Si:H/晶Si异质结光电二极管雪崩光电流倍增
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791592
H. Ohtake, Y. Hirano, N. Saito, F. Sato, M. Abe, K. Sawada, T. Ando
{"title":"Avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode","authors":"H. Ohtake, Y. Hirano, N. Saito, F. Sato, M. Abe, K. Sawada, T. Ando","doi":"10.1109/COMMAD.1998.791592","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791592","url":null,"abstract":"Photocurrent multiplication in amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiodes was studied, which were fabricated on n-type crystalline Si substrates with different resistivities using an electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) system. Photocurrent multiplication was observed only in the sample of resistivity of 0.4 /spl Omega//spl middot/cm. The dependence on the incident light wavelength suggests that the photocurrent increase was caused by the avalanche multiplication in the amorphous Si:H layer.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134201545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Observation of state filling effects in the carrier dynamics of self-assembled quantum dots 自组装量子点载流子动力学中状态填充效应的观察
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791658
L. Herz, L. Dao, M. Johnston, M. Gal, C. Jagadish
{"title":"Observation of state filling effects in the carrier dynamics of self-assembled quantum dots","authors":"L. Herz, L. Dao, M. Johnston, M. Gal, C. Jagadish","doi":"10.1109/COMMAD.1998.791658","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791658","url":null,"abstract":"The time-resolved photoluminescence technique of picosecond excitation correlation has been applied to self-assembled InGaAs quantum dots grown in the Stranski-Krastanow mode. The nonlinear cross-correlation signal is shown to be due to filling of the quantum dot ground state causing an increase in recombination from the first excited state with increasing carrier density. Carrier relaxation times and radiative as well as non-radiative recombination times for the ground and the first excited state of the quantum dot system are determined using a model based on state filling effect.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133508124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Determination of carrier generation lifetime via current transient in MOS capacitor 利用MOS电容电流瞬态法测定载流子产生寿命
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI: 10.1109/COMMAD.1998.791683
F. Kong, M. Lau, Y. Yeow
{"title":"Determination of carrier generation lifetime via current transient in MOS capacitor","authors":"F. Kong, M. Lau, Y. Yeow","doi":"10.1109/COMMAD.1998.791683","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791683","url":null,"abstract":"A technique for the measurement of semiconductor minority carrier generation lifetime based on MOS capacitor current transients is presented. The lifetime is extracted by fitting a derived analytical model of the current transients to the experimental data. Values of lifetime obtained by this technique are shown to agree well with conventional capacitance transient methods. A 2D numerical simulation to verify the method is also presented.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"06 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129269751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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