自组装量子点载流子动力学中状态填充效应的观察

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791658

L. Herz, L. Dao, M. Johnston, M. Gal, C. Jagadish

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引用次数: 1

摘要

将皮秒激发相关的时间分辨光致发光技术应用于在stranski - krstanow模式下生长的InGaAs量子点。非线性互相关信号是由于量子点基态的填充导致从第一激发态的复合随着载流子密度的增加而增加。利用基于状态填充效应的模型确定了量子点系统的载流子弛豫时间、基态和第一激发态的辐射和非辐射复合时间。

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Observation of state filling effects in the carrier dynamics of self-assembled quantum dots

The time-resolved photoluminescence technique of picosecond excitation correlation has been applied to self-assembled InGaAs quantum dots grown in the Stranski-Krastanow mode. The nonlinear cross-correlation signal is shown to be due to filling of the quantum dot ground state causing an increase in recombination from the first excited state with increasing carrier density. Carrier relaxation times and radiative as well as non-radiative recombination times for the ground and the first excited state of the quantum dot system are determined using a model based on state filling effect.

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来源期刊

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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