Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions

Sub-threshold damage in n and p-type Si implanted and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). Irrespective of the ion mass, DLTS spectra show a transition or critical dose below which point defects in p-type Si and no electrically active defects in n-type Si are transformed in to extended defect signatures above this dose. DLTS observation correlates well with the TEM analysis; for the doses above critical dose extended defects are observed. Furthermore, mass of the implanted ion has been found effecting the type of extended defects even though the doses were adjusted to create a similar damage distribution for all the implanted ions.