Y. Li, M. Atashbar, M. Ghantasala, W. Wlodarski, C. Cantalini, S. Santucci, G. Sberveglieri
{"title":"WO/sub 3/ thin films prepared by the sol-gel process for ozone sensing","authors":"Y. Li, M. Atashbar, M. Ghantasala, W. Wlodarski, C. Cantalini, S. Santucci, G. Sberveglieri","doi":"10.1109/COMMAD.1998.791648","DOIUrl":null,"url":null,"abstract":"t Abstract- Tungsten trioxide (WO3 thin films have been prepared by sol-gel process and their ozone sensing properties. The morphology, microstructure, crystalline structure and chemical composition of the thin films have been analysed using SEM, XRD and RBS techniques. SEM analysis showed that WO, thin films annealed at 500°C are smooth and uniform with a grain size of 20-50 nm, above which microcracking observed in the films. The WO, films annealed up to 400°C are amorphous, while annealing at 500°C and above, resulted in the formation of monoclinic WO, polycrystalline structure with (200) preferential orientation. RBS results have revealed that the films annealed at 400°C are stoichiometric, above which the films turned to off-stoichiometric. The electrical resistance of the thin films annealed at 500°C increased 18 times when it exposed to 175 ppb 0, compared to the air exposure with a response time of 1-2 min. The details of the structural and microstructural analysis of the films and their effects on the sensing properties are discussed. applications. In this paper, we report the details of the structural and microstructural characterisation of the WO, thin films derived from sol-gel process and their 0, gas sensing properties. 11. EXPERIMENTAL 1. Sample Preparation","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791648","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
t Abstract- Tungsten trioxide (WO3 thin films have been prepared by sol-gel process and their ozone sensing properties. The morphology, microstructure, crystalline structure and chemical composition of the thin films have been analysed using SEM, XRD and RBS techniques. SEM analysis showed that WO, thin films annealed at 500°C are smooth and uniform with a grain size of 20-50 nm, above which microcracking observed in the films. The WO, films annealed up to 400°C are amorphous, while annealing at 500°C and above, resulted in the formation of monoclinic WO, polycrystalline structure with (200) preferential orientation. RBS results have revealed that the films annealed at 400°C are stoichiometric, above which the films turned to off-stoichiometric. The electrical resistance of the thin films annealed at 500°C increased 18 times when it exposed to 175 ppb 0, compared to the air exposure with a response time of 1-2 min. The details of the structural and microstructural analysis of the films and their effects on the sensing properties are discussed. applications. In this paper, we report the details of the structural and microstructural characterisation of the WO, thin films derived from sol-gel process and their 0, gas sensing properties. 11. EXPERIMENTAL 1. Sample Preparation