非晶SiC:H/非晶Si:H/晶Si异质结光电二极管雪崩光电流倍增

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791592

H. Ohtake, Y. Hirano, N. Saito, F. Sato, M. Abe, K. Sawada, T. Ando

{"title":"非晶SiC:H/非晶Si:H/晶Si异质结光电二极管雪崩光电流倍增","authors":"H. Ohtake, Y. Hirano, N. Saito, F. Sato, M. Abe, K. Sawada, T. Ando","doi":"10.1109/COMMAD.1998.791592","DOIUrl":null,"url":null,"abstract":"Photocurrent multiplication in amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiodes was studied, which were fabricated on n-type crystalline Si substrates with different resistivities using an electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) system. Photocurrent multiplication was observed only in the sample of resistivity of 0.4 /spl Omega//spl middot/cm. The dependence on the incident light wavelength suggests that the photocurrent increase was caused by the avalanche multiplication in the amorphous Si:H layer.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode\",\"authors\":\"H. Ohtake, Y. Hirano, N. Saito, F. Sato, M. Abe, K. Sawada, T. Ando\",\"doi\":\"10.1109/COMMAD.1998.791592\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Photocurrent multiplication in amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiodes was studied, which were fabricated on n-type crystalline Si substrates with different resistivities using an electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) system. Photocurrent multiplication was observed only in the sample of resistivity of 0.4 /spl Omega//spl middot/cm. The dependence on the incident light wavelength suggests that the photocurrent increase was caused by the avalanche multiplication in the amorphous Si:H layer.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791592\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791592","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

采用电子回旋共振(ECR)等离子体增强化学气相沉积(CVD)系统在不同电阻率的n型晶体硅衬底上制备了非晶SiC:H/非晶Si:H/晶Si异质结光电二极管，研究了其光电流倍增特性。仅在电阻率为0.4 /spl ω //spl中点/cm的样品中观察到光电流倍增现象。对入射光波长的依赖表明，光电流的增加是由非晶Si:H层中的雪崩倍增引起的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode

Photocurrent multiplication in amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiodes was studied, which were fabricated on n-type crystalline Si substrates with different resistivities using an electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) system. Photocurrent multiplication was observed only in the sample of resistivity of 0.4 /spl Omega//spl middot/cm. The dependence on the incident light wavelength suggests that the photocurrent increase was caused by the avalanche multiplication in the amorphous Si:H layer.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

自引率

0.00%

发文量