利用MOS电容电流瞬态法测定载流子产生寿命

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791683

F. Kong, M. Lau, Y. Yeow

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引用次数: 0

摘要

提出了一种基于MOS电容电流瞬态测量半导体少数载流子产生寿命的方法。通过将导出的电流瞬态分析模型拟合到实验数据中来提取寿命。该方法得到的寿命值与传统的电容暂态方法吻合较好。通过二维数值模拟验证了该方法的有效性。

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Determination of carrier generation lifetime via current transient in MOS capacitor

A technique for the measurement of semiconductor minority carrier generation lifetime based on MOS capacitor current transients is presented. The lifetime is extracted by fitting a derived analytical model of the current transients to the experimental data. Values of lifetime obtained by this technique are shown to agree well with conventional capacitance transient methods. A 2D numerical simulation to verify the method is also presented.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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