利用高势垒多量子阱结构增强光带宽

M.G. Xu, T. Fisher, J. Dell
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引用次数: 0

摘要

我们利用高势垒多量子阱结构证明了基于量子受限斯塔克效应的调制器光带宽的增强。这是通过仔细地将法布里-珀罗模式放置在吸收层在激子峰附近表现出异常折射率色散的波长区域来实现的。高势垒多量子阱结构中激子振子强度的增强和重空穴与光空穴之间的分离最终导致光带宽的增强。仿真结果表明,以电场增加三倍为代价,光带宽增加2.5 nm,可获得与低势垒材料制成的调制器相同的对比度特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enhancement of optical bandwidth using high barrier multiquantum well structures
We demonstrate the enhancement of optical bandwidth for modulators based on the quantum confined Stark effect using high barrier multiquantum well structures. This is achieved by carefully placing the Fabry-Perot mode in the wavelength region where the absorbing layer exhibits anomalous refractive index dispersion in the vicinity of the exciton peaks. The enhancement in both the exciton oscillator strength and the separation between the heavy hole and light hole in high barrier multiquantum well structures ultimately results in the enhancement of optical bandwidth. A simulation example shows an increase of 2.5 nm in optical bandwidth at the cost of a factor of three increase in electric field to obtain the same contrast ratio characteristics as a modulator fabricated with low barrier material.
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