{"title":"利用高势垒多量子阱结构增强光带宽","authors":"M.G. Xu, T. Fisher, J. Dell","doi":"10.1109/COMMAD.1998.791699","DOIUrl":null,"url":null,"abstract":"We demonstrate the enhancement of optical bandwidth for modulators based on the quantum confined Stark effect using high barrier multiquantum well structures. This is achieved by carefully placing the Fabry-Perot mode in the wavelength region where the absorbing layer exhibits anomalous refractive index dispersion in the vicinity of the exciton peaks. The enhancement in both the exciton oscillator strength and the separation between the heavy hole and light hole in high barrier multiquantum well structures ultimately results in the enhancement of optical bandwidth. A simulation example shows an increase of 2.5 nm in optical bandwidth at the cost of a factor of three increase in electric field to obtain the same contrast ratio characteristics as a modulator fabricated with low barrier material.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhancement of optical bandwidth using high barrier multiquantum well structures\",\"authors\":\"M.G. Xu, T. Fisher, J. Dell\",\"doi\":\"10.1109/COMMAD.1998.791699\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate the enhancement of optical bandwidth for modulators based on the quantum confined Stark effect using high barrier multiquantum well structures. This is achieved by carefully placing the Fabry-Perot mode in the wavelength region where the absorbing layer exhibits anomalous refractive index dispersion in the vicinity of the exciton peaks. The enhancement in both the exciton oscillator strength and the separation between the heavy hole and light hole in high barrier multiquantum well structures ultimately results in the enhancement of optical bandwidth. A simulation example shows an increase of 2.5 nm in optical bandwidth at the cost of a factor of three increase in electric field to obtain the same contrast ratio characteristics as a modulator fabricated with low barrier material.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791699\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enhancement of optical bandwidth using high barrier multiquantum well structures
We demonstrate the enhancement of optical bandwidth for modulators based on the quantum confined Stark effect using high barrier multiquantum well structures. This is achieved by carefully placing the Fabry-Perot mode in the wavelength region where the absorbing layer exhibits anomalous refractive index dispersion in the vicinity of the exciton peaks. The enhancement in both the exciton oscillator strength and the separation between the heavy hole and light hole in high barrier multiquantum well structures ultimately results in the enhancement of optical bandwidth. A simulation example shows an increase of 2.5 nm in optical bandwidth at the cost of a factor of three increase in electric field to obtain the same contrast ratio characteristics as a modulator fabricated with low barrier material.