耗尽型和增强型GaInP/GaAs /spl δ /- hemt的制备

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791624

Min-Yuan Wu, W. Lour, Ge Huang, Y. Shih

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引用次数: 1

摘要

提出了一种新的HEMT结构来制备这两种器件。采用额外的n-GaAs帽层来控制器件的工作模式。因此，通过选择性地去除帽层，在同一芯片上同时制备了耗尽型和增强型HEMT。对于1x100pm2的器件，耗尽模式器件的引脚电压为-1.8 K，增强模式器件的最大外加栅极电压为+I.8测量的输出电流和跨导分别为260 (200)mA/mm和175 (150)mS/mm。耗尽模式和增强模式器件的测量频率分别为6.3 (6)GHz和13 (12)GHz。

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Fabrication of depletion- and enhancement-mode GaInP/GaAs /spl delta/-HEMT's

A new HEMT structure was proposed to fabricate both types .f device. Additional n-GaAs cap layer was employed to control the device operation mode. Accordingly, both depletion- and enhancement- mode HEMT's were simultaneously fabricated on the same chip by selectivelv removing the cap layer. For a 1x100 pm2 device, the pinch-c$f voltage for the depletion mode device is -1.8 K The maximum applied gate voltage for the enhancement mode one is +I.8 K The measured output current and transconductance are 260 (200) mA/mm, 175 (150) mS/mm. The measured f t und f ma are 6.3 (6) and 13 (12) GHz for depletion- and enhancement-mode devices, respectively.

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来源期刊

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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