一种新型InGaP/GaAs双异质结双极晶体管(DHBT)，具有/spl δ /掺杂宽间隙集电极

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791631

W. Liu, W.C. Wang, W. Chang, K. Yu, S. Feng, J. Yan

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引用次数: 0

摘要

制备并研究了具有A /spl δ /掺杂宽间隙集电极结构的In/sub 0.5/Ga/sub 0.5/P-GaAs双异质结双极晶体管(DHBT)。实验结果表明，该器件具有偏移电压50mv小，饱和电压1v小，击穿电压20v大，电流增益20的优点。这些良好的特性主要是由于在发射极-基极(E-B)和基极-集电极(B-C)异质结处完全消除了电位尖峰。因此，所研究的器件在高速、高功率、低功耗和大输入信号电路中具有良好的应用前景。

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A new InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a /spl delta/-doped wide-gap collector

A In/sub 0.5/Ga/sub 0.5/P-GaAs double heterojunction bipolar transistor (DHBT) with a /spl delta/-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at the emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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