自对准t栅极异质结构场效应晶体管的新工艺

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791625

H.R. Chen, Y. Shih, W. S. Lour, M. Wu

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引用次数: 1

摘要

本文报道了采用n/sup +// n/sup +/// //spl δ /(P/sup +/)/n结构的自对准t栅InGaP/GaAs场效应管。N/sup +/-InGaP//spl δ /(P/sup +/)-InGaP/ N - gaas结构形成平面掺杂势垒。过蚀刻n/sup +/-GaAs/ n/sup +/-InGaP层通过在InGaP和GaAs层之间高度选择性的蚀刻提供自对准t栅极的实现。当有效栅极长度为1.5/spl倍/100 (0.6/spl倍/100)/spl μ /m/sup 2/时，器件的外在跨导、单位电流增益频率和单位功率增益频率分别为78 (80)mS/mm、9(19.5)和28 (30)GHz。此外，所有提出的器件都具有良好的直流和交流线性度。

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New process for self-aligned T-gate heterostructure field-effect transistors with reduced gate length

This paper reports on self-aligned T-gate InGaP/GaAs FETs using n/sup +//N/sup +///spl delta/(P/sup +/)/n structures. The N/sup +/-InGaP//spl delta/(P/sup +/)-InGaP/n-GaAs structure forms a planar-doped barrier. An over-etch n/sup +/-GaAs/N/sup +/-InGaP layer offers the implement of self-aligned T-gate by an highly selective etch between the InGaP and a GaAs layers. A fabricated device with an effective gate length of 1.5/spl times/100 (0.6/spl times/100) /spl mu/m/sup 2/ exhibits an extrinsic transconductance, unity-current gain frequency, and unity-power gain frequency of 78 (80) mS/mm, 9 (19.5), and 28 (30) GHz, respectively. Moreover, all proposed devices show good dc and ac linearity.

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来源期刊

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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