热互扩散对GaAs/AlGaAs量子阱红外探测器探测波长的调谐

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791600

Xingquan Liu, Ning Li, Xiaoshuang Chen, Wei Lu, Wen-lan Xu, Xianzhang Yuan, Nanxi Li, S. Shen, S. Yuan, H. Tan, C. Jagadish

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引用次数: 0

摘要

利用热互扩散使量子阱红外探测器的峰值响应波长发生偏移。与生长器件相比，900/spl℃退火器件红移最大可达0.7 /spl mu/m。采用误差函数势曲线计算混合过程。较大的红移归因于硅掺杂剂增强的混合。900/spl℃退火后的QWIP的暗电流和响应率均比生长时降低，这是由于si掺杂物的外扩散导致量子阱中电子浓度降低所致。

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Tuning of detection wavelength of GaAs/AlGaAs quantum-well IR photo-detectors by thermal interdiffusion

Thermal interdiffusion is used to shift peak response wavelength of the quantum well infrared photodetectors (QWIP). A maximum of 0.7 /spl mu/m red-shift for 900/spl deg/C annealed devices compared with as-grown one has been obtained. Error function potential profile is used to calculate the intermixing process. The large red shift is attributed to Si-dopant enhanced intermixing. Both the dark current and responsivity of QWIP are decreased for 900/spl deg/C annealed sample than as-grown one, which is attributed to decrease of electron concentration in the quantum well due to Si-dopant outdiffusion.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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